SCHEMBL328599

SCHEMBL328599

C=C(C)C(=O)OC1CCOC(=O)C1

nearest known ligand 0.35

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.35
ALDH1A1 P00352 3/20 0.33
GPX4 P36969 1/20 0.32
MAPK1 P28482 2/20 0.32
POLB P06746 2/20 0.32
KDM4E B2RXH2 1/20 0.32
NPC1 O15118 1/20 0.32
MAPT P10636 1/20 0.32
PKM P14618 1/20 0.32
HTT P42858 1/20 0.32
RECQL P46063 1/20 0.32
RAB9A P51151 1/20 0.32
ATM Q13315 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9880098 0.84 GPX4 (0.34) ALDH1A1GPX4POLBKDM4ENPC1
SCHEMBL76528 0.83 ALDH1A1 (0.39) ALDH1A1GPX4POLBKDM4ENPC1
SCHEMBL26300297 0.83 CYP1A2 (0.39) CYP1A2ALDH1A1MAPK1POLBTDP1
SCHEMBL15242348 0.78 CYP1A2 (0.32) CYP1A2
SCHEMBL20717935 0.76 CYP1A2 (0.35) CYP1A2ATM
SCHEMBL1899139 0.75 CYP1A2 (0.33) CYP1A2
SCHEMBL9610627 0.75 ALDH1A1 (0.34) ALDH1A1GPX4POLBKDM4ENPC1
SCHEMBL70883 0.75 MAPK1 (0.49) CYP1A2ALDH1A1MAPK1POLBKDM4E
SCHEMBL19012506 0.75 MAPK1 (0.49) CYP1A2ALDH1A1MAPK1POLBKDM4E
SCHEMBL1903579 0.74 ALDH1A1 (0.37) ALDH1A1GPX4ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 72 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 US disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 US disclosed
US-11487203-B2 Monomers, polymers and photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-11-01 US disclosed
US-11016388-B2 Overcoat compositions and methods for photolithography ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2021-05-25 US disclosed
US-10719014-B2 Photoresists comprising amide component ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-07-21 US disclosed
US-10564542-B2 Photoresist compositions and methods DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2020-02-18 US disclosed
US-20190204743-A1 PHOTORESIST COMPOSITIONS AND METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2019-07-04 US disclosed
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-07-19 US disclosed
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-07-19 US disclosed
EP-1767539-B1 ORGANIC ANTIMONY COMPOUND, PROCESS FOR PRODUCING THE SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER USING THE SAME, AND POLYMER OTSUKA CHEMICAL CO LTD (JP) 2011-07-27 EP disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20100055621-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-20100055621-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-20090299008-A1 Organic antimony compound, process for producing the same, living radical polymerization initiator, process for producing polymer using the same, and polymer OTSUKA CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
EP-1767539-A1 ORGANIC ANTIMONY COMPOUND, PROCESS FOR PRODUCING THE SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER USING THE SAME, AND POLYMER OTSUKA CHEMICAL COMPANY, LTD. (JP) 2007-03-28 EP disclosed
US-7144675-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-12-05 US disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11016388-B2 Overcoat compositions and methods for photolithography OGT, COLGALT1, PARG CYP1A2 1323/4885ALDH1A1 2382/4885GPX4 1705/4885
US-10564542-B2 Photoresist compositions and methods PARG, PNN, PARN CYP1A2 4427/4885ALDH1A1 4826/4885GPX4 1584/4885
US-10719014-B2 Photoresists comprising amide component ASPH, ALAD, SUN2 CYP1A2 985/4885ALDH1A1 823/4885GPX4 478/4885
US-20090299008-A1 Organic antimony compound, process for producing the same, living radical polymerization initiator, process for producing polymer using the same, and polymer AOC2, ODC1, MCM7 CYP1A2 177/4885ALDH1A1 1542/4885GPX4 1654/4885
US-11487203-B2 Monomers, polymers and photoresist compositions MAP1LC3C, LCP1, PIN1 CYP1A2 1666/4885ALDH1A1 2061/4885GPX4 2433/4885
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS MAP1LC3C, LCP1, PIN1 CYP1A2 1666/4885ALDH1A1 2061/4885GPX4 2433/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.