SCHEMBL3454498

SCHEMBL3454498

O=C(OCCS(=O)(=O)OS(c1ccccc1)(c1ccccc1)c1ccccc1)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.51
GAA P10253 1/20 0.51
RECQL P46063 1/20 0.45
KMT2A Q03164 2/20 0.44
SMN1; SMN2 Q16637 2/20 0.43
CYP17A1 P05093 2/20 0.42
CYP19A1 P11511 2/20 0.42
KDM4E B2RXH2 1/20 0.42
LMNA P02545 1/20 0.42
NPC1 O15118 1/20 0.42
RAB9A P51151 1/20 0.42
CYP1A2 P05177 1/20 0.41
CYP3A4 P08684 1/20 0.41
CYP2D6 P10635 1/20 0.41
CYP2C9 P11712 1/20 0.41
CYP2C19 P33261 1/20 0.41
ENPP3 O14638 1/20 0.41
CA2 P00918 1/20 0.41
ENPP1 P22413 1/20 0.41
ENPP2 Q13822 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3454542 0.93 ALDH1A1 (0.49) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL2887917 0.79 ALDH1A1 (0.45) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL1398383 0.78 ALDH1A1 (0.48) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL13836391 0.77 ALDH1A1 (0.44) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL515759 0.77 ALDH1A1 (0.43) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL3790174 0.76 ALDH1A1 (0.42) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL1977435 0.76 KDM4E (0.52) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL17420151 0.75 ALDH1A1 (0.41) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL3454497 0.75 ALDH1A1 (0.45) ALDH1A1GAARECQLKMT2ASMN1; SMN2
SCHEMBL12938401 0.74 NPSR1 (0.46) ALDH1A1KMT2ACYP17A1CYP19A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10054853-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-21 US disclosed
US-9897916-B2 Compound, polymer compound, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-20 US disclosed
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-9703193-B2 Onium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-11 US disclosed
US-20170038683-A1 COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-09 US disclosed
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-03 US disclosed
US-9366958-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-22 US disclosed
US-9164384-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 US disclosed
US-20140322650-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-30 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170038683-A1 COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, WDR26, LBR ALDH1A1 4414/4885GAA 4395/4885RECQL 3243/4885
US-10054853-B2 Monomer, polymer, resist composition, and patterning process ASIC1, PKD1, ARCN1 ALDH1A1 3411/4885GAA 3341/4885RECQL 3568/4885
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, PKD1, ARCN1 ALDH1A1 3411/4885GAA 3341/4885RECQL 3568/4885
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SLC6A5, EIF2B5, EIF2B4 ALDH1A1 3739/4885GAA 924/4885RECQL 2059/4885
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS TYK2, VRK2, ARSA ALDH1A1 3818/4885GAA 3795/4885RECQL 3837/4885
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS PAG1, PARG, PAH ALDH1A1 2282/4885GAA 681/4885RECQL 4106/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.