Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 5/20 | 0.42 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | ESR2 | Q92731 | 3/20 | 0.39 |
| ▸ | CA2 | P00918 | 2/20 | 0.38 |
| ▸ | CA12 | O43570 | 1/20 | 0.38 |
| ▸ | CA1 | P00915 | 1/20 | 0.38 |
| ▸ | CA9 | Q16790 | 1/20 | 0.38 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.38 |
| ▸ | UQCRB | P14927 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | POLB | P06746 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | GFER | P55789 | 1/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | MMP2 | P08253 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3146242 | 0.95 | LMNA (0.43) | ESR1HSD11B1LMNAESR2CA2 | |
| SCHEMBL37033 | 0.89 | HTR6 (0.42) | HSD11B1LMNACA2CA12CA1 | |
| SCHEMBL1615067 | 0.89 | ESR1 (0.39) | ESR1HSD11B1LMNAESR2CA2 | |
| SCHEMBL8862179 | 0.87 | ACHE (0.42) | ESR1LMNAESR2CA2CA1 | |
| SCHEMBL3141391 | 0.85 | CA1 (0.44) | ESR1HSD11B1ESR2CA2CA1 | |
| SCHEMBL4643793 | 0.84 | CA1 (0.46) | HSD11B1CA2CA12CA1CA9 | |
| SCHEMBL503373 | 0.84 | PKM (0.46) | HSD11B1MEN1KMT2APOLBALDH1A1 | |
| SCHEMBL3130157 | 0.84 | PKM (0.46) | HSD11B1MEN1KMT2APOLBALDH1A1 | |
| SCHEMBL4858460 | 0.84 | PKM (0.58) | HSD11B1ESR2CA2CA1GAA | |
| SCHEMBL3136040 | 0.84 | CA1 (0.45) | ESR1HSD11B1ESR2CA2CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 172 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| US-20070111138-A1 | Photoactive compounds | MERCK PATENT GMBH (DE) | 2007-05-17 | — | — | US | claimed |
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | disclosed |
| US-20240369925-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| WO-2023082371-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | 上海新阳半导体材料股份有限公司 | 2023-05-19 | — | — | WO | disclosed |
| EP-1676835-A1 | PROCESS FOR PRODUCING TRIARYLSULFONIUM SALT | Wako Pure Chemical Industries, Ltd. (JP) | 2006-07-05 | — | — | EP | disclosed |
| EP-1666970-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-06-07 | — | — | EP | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| EP-1443362-A2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-08-04 | — | — | EP | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-6468714-B2 | FINE PHOTORESIST PATTERNS | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
| US-5679496-A | CONTAINING SULFONIUM SALT HAVING TERT-BUTOXYCARBONYLMETHOXY GROUP(S) AS ACID LABILE GROUPS; SENSITIVITY, RESOLUTION, ETCH AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-10-21 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | ESR1 3319/4885HSD11B1 2144/4885LMNA 772/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.