Known targets — ChEMBL curated mechanism
ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Fluoride. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL10382021 | 1.00 | CA4 (0.33) | — | |
| Fluoride SCHEMBL17766113 | 1.00 | CA4 (0.33) | — | |
| Fluoride SCHEMBL29129531 | 1.00 | — | — | |
| Fluoride SCHEMBL28869569 | 0.87 | — | — | |
| Fluoride SCHEMBL15011271 | 0.87 | — | — | |
| Fluoride SCHEMBL11682143 | 0.87 | — | — | |
| Fluoride SCHEMBL1949953 | 0.87 | — | — | |
| Fluoride SCHEMBL29034363 | 0.87 | — | — | |
| Fluoride SCHEMBL378801 | 0.87 | — | — | |
| Fluoride SCHEMBL27488846 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2373 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260146336-A1 | METHOD FOR THE ANTI-CORROSION TREATMENT OF A MAGNESIUM ALLOY PART, CORRESPONDING ANTI-CORROSION SUBSTANCE AND TREATED PART | AIRBUS HELICOPTERS (FR) | 2026-05-28 | — | — | US | claimed |
| CN-122035785-A | Method and system for recycling regenerated electrolyte | 中铝郑州有色金属研究院有限公司 | 2026-05-15 | — | — | CN | claimed |
| US-20260132335-A1 | ETCHANT COMPOSITIONS FOR ETCHING SILICON GERMANIUM FILMS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-05-14 | — | — | US | claimed |
| US-12624287-B2 | Composition for the selective etching of silicon | ENF TECHNOLOGY CO., LTD. (KR) | 2026-05-12 | — | — | US | claimed |
| US-12492340-B2 | Etchant | SAMSUNG DISPLAY CO., LTD. (KR) | 2025-12-09 | — | — | US | claimed |
| US-20250361442-A1 | ETCHANT COMPOSITION | DONGJIN SEMICHEM CO LTD (KR) | 2025-11-27 | — | — | US | claimed |
| US-20250346812-A1 | COMPOSITION FOR THE SELECTIVE ETCHING OF SILICON | ENF TECHNOLOGY CO LTD (KR) | 2025-11-13 | — | — | US | claimed |
| US-12415955-B2 | Etchant composition for silicon layer and etching method using the same | ENF TECHNOLOGY CO., LTD. (KR) | 2025-09-16 | — | — | US | claimed |
| US-12384967-B2 | Etchant | SAMSUNG DISPLAY CO., LTD. (KR) | 2025-08-12 | — | — | US | claimed |
| CN-120049017-A | Org/ZnSO4Electrolyte, preparation method thereof and application of electrolyte in secondary battery | 同济大学 | 2025-05-27 | — | — | CN | claimed |
| US-4299804-A | Removal of magnesium and aluminum impurities from wet process phosphoric acid | AGRICO CHEMICAL COMPANY (US) | 1981-11-10 | — | — | US | claimed |
| EP-0020021-A2 | Method for the direct electrodeposition of a chromium layer on a metal substrate and a lithographic sheet comprising a metal substrate covered with such an electrodeposited chromium layer | PRINTING DEVELOPMENTS INC (US) | 1980-12-10 | — | — | EP | claimed |
| US-4160811-A | METATHESIS, SODIUM FLUORIDES, HYDROFLUORIC ACID, TETRAFLUOROAMMONIUM HEXAFLUORO(GROUP 5)METALLOID | TRW INC. (US) | 1979-07-10 | — | — | US | claimed |
| EP-0002380-A1 | Laundering process for dual-bleaching stained fabrics | BASF WYANDOTTE CORPORATION (US) | 1979-06-13 | — | — | EP | claimed |
| US-4144315-A | REACTING FLUOSILICIC ACID WITH AMMONIA | GOULDING CHEMICALS LIMITED (IE) | 1979-03-13 | — | — | US | claimed |
| US-4120650-A | Laundering process for dual bleaching stained fabrics | BASF WYANDOTTE CORPORATION (US) | 1978-10-17 | — | — | US | claimed |
| US-4089936-A | HEATING AMMONIUM FLUORIDE WITH POTASSIUM FLUORIDE, CONVERSION TO SODIUM BIFLUORIDE, DECOMPOSITION | GOULDING CHEMICALS LIMITED (EI) | 1978-05-16 | — | — | US | claimed |
| US-4082839-A | PREPARATION OF SULFUR FLUORIDES | ALLIED CHEMICAL CORPORATION (US) | 1978-04-04 | — | — | US | claimed |
| US-4073701-A | ACETANILIDE OXIDATION INHIBITING AGENT | BETHLEHEM STEEL CORPORATION (US) | 1978-02-14 | — | — | US | claimed |
| US-4067957-A | Process for producing hydrogen fluoride from an aqueous hydrofluorosilicic acid solution | FITZWILTON LIMITED (EI) | 1978-01-10 | — | — | US | claimed |