SCHEMBL3797265

SCHEMBL3797265

O=S(=O)(O)CC(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.32

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CES1 P23141 4/20 0.32
ALDH1A1 P00352 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
TSHR P16473 2/20 0.31
TDP1 Q9NUW8 2/20 0.31
CYP1A2 P05177 1/20 0.31
CYP3A4 P08684 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3786552 0.97 CES1 (0.31) CES1
SCHEMBL15203836 0.77
SCHEMBL776626 0.74 ALDH1A1 (0.32) ALDH1A1L3MBTL1TSHRTDP1
SCHEMBL779226 0.74 ALDH1A1 (0.32) ALDH1A1L3MBTL1TSHRTDP1
SCHEMBL2110871 0.74 ALDH1A1 (0.32) ALDH1A1L3MBTL1TSHRTDP1CYP1A2
SCHEMBL14460716 0.74 CES1 (0.34) CES1
SCHEMBL3786547 0.74 MEN1 (0.38) CES1ALDH1A1TSHR
SCHEMBL28558721 0.73 TSHR (0.35) ALDH1A1L3MBTL1TSHRTDP1
SCHEMBL29433272 0.73 TSHR (0.35) ALDH1A1L3MBTL1TSHRTDP1
SCHEMBL10002102 0.73 TSHR (0.35) ALDH1A1L3MBTL1TSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11215926-B2 Sulfonium compound, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-04 US disclosed
US-20200159115-A1 NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-21 US disclosed
US-10025180-B2 Sulfonium compound, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-07-17 US disclosed
EP-3343291-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2018-07-04 EP disclosed
US-9944738-B2 Polymer compound, positive resist composition, laminate, and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-04-17 US disclosed
US-9944738-B2 Polymer compound, positive resist composition, laminate, and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-04-17 US disclosed
US-20180059543-A1 SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-01 US disclosed
EP-3127928-B1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2017-11-15 EP disclosed
US-20170037167-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-09 US disclosed
US-20170037167-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-09 US disclosed
US-20170038683-A1 COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-09 US disclosed
EP-3127928-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2017-02-08 EP disclosed
US-20160334706-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-17 US disclosed
US-20130005997-A1 PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-20100209827-A1 NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-19 US disclosed
US-20100209827-A1 NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170038683-A1 COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, WDR26, LBR CES1 4139/4885ALDH1A1 4414/4885L3MBTL1 585/4885
US-11215926-B2 Sulfonium compound, resist composition, and patterning process HNRNPU, PAG1, LSM14A CES1 4576/4885ALDH1A1 4490/4885L3MBTL1 902/4885
US-10025180-B2 Sulfonium compound, resist composition, and patterning process SRR, SPIN2B, SPIN4 CES1 4009/4885ALDH1A1 3934/4885L3MBTL1 2392/4885
US-20180059543-A1 SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS SRR, SPIN2B, SPIN4 CES1 4009/4885ALDH1A1 3934/4885L3MBTL1 2392/4885
US-20130005997-A1 PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM OXGR1, FFAR2, OXER1 CES1 295/4885ALDH1A1 148/4885L3MBTL1 3933/4885
US-20200159115-A1 NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS ETV6, EEF2, EEF1G CES1 4773/4885ALDH1A1 4577/4885L3MBTL1 1873/4885
US-20100209827-A1 NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME DAP3, MRPS23, ASIC3 CES1 3718/4885ALDH1A1 4399/4885L3MBTL1 4272/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.