Known targets — ChEMBL curated mechanism
ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | CES1 | P23141 | 4/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3791468 | 0.76 | HSD11B1 (0.36) | MEN1ALDH1A1TSHRKMT2A | |
| SCHEMBL3797265 | 0.74 | CES1 (0.32) | ALDH1A1TSHRCES1 | |
| SCHEMBL10634760 | 0.74 | ALDH1A1 (0.35) | MEN1ALDH1A1TSHRKMT2A | |
| SCHEMBL28897656 | 0.73 | KDM4E (0.35) | MEN1ALDH1A1TSHRKMT2A | |
| SCHEMBL3786552 | 0.72 | CES1 (0.31) | CES1 | |
| SCHEMBL28385000 | 0.69 | MEN1 (0.35) | MEN1ALDH1A1TSHRKMT2A | |
| Potassium Ion SCHEMBL29015249 | 0.67 | CA1 (0.31) | — | |
| SCHEMBL28533786 | 0.67 | CA1 (0.31) | — | |
| Lithium Ion SCHEMBL28696795 | 0.67 | CA1 (0.31) | — | |
| SCHEMBL29895289 | 0.67 | CA1 (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4060407-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2026-04-29 | — | — | EP | disclosed |
| US-20220308451-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-09-29 | — | — | US | disclosed |
| CN-115113483-A | Chemically amplified positive resist composition and method for forming resist pattern | 信越化学工业株式会社 | 2022-09-27 | — | — | CN | disclosed |
| EP-4060407-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2022-09-21 | — | — | EP | disclosed |
| CN-106432574-B | High-molecular compound, eurymeric anti-corrosion agent composition, laminated body and resist pattern forming method | 信越化学工业株式会社 | 2019-05-21 | — | — | CN | disclosed |
| US-9944738-B2 | Polymer compound, positive resist composition, laminate, and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-17 | — | — | US | disclosed |
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| EP-3127928-B1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2017-11-15 | — | — | EP | disclosed |
| CN-106432574-A | Polymer compound, positive resist composition, laminate, and resist patterning process | 信越化学工业株式会社 | 2017-02-22 | — | — | CN | disclosed |
| US-20170037167-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| EP-3127928-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2017-02-08 | — | — | EP | disclosed |
| US-9122155-B2 | Sulfonium salt, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-01 | — | — | US | disclosed |
| US-8956803-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-20130005997-A1 | PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-03 | — | — | US | disclosed |
| US-8283104-B2 | Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-09 | — | — | US | disclosed |
| US-20100209827-A1 | NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | WDR1, WDR26, LBR | MEN1 1860/4885ALDH1A1 4414/4885TSHR 2544/4885 |
| US-20130005997-A1 | PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM | OXGR1, FFAR2, OXER1 | MEN1 4054/4885ALDH1A1 148/4885TSHR 96/4885 |
| US-20100209827-A1 | NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | DAP3, MRPS23, ASIC3 | MEN1 4475/4885ALDH1A1 4399/4885TSHR 3473/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.