Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES2 | O00748 | 1/20 | 0.42 |
| ▸ | CES1 | P23141 | 1/20 | 0.42 |
| ▸ | GABRB1 | P18505 | 2/20 | 0.41 |
| ▸ | GABRB2 | P47870 | 2/20 | 0.41 |
| ▸ | GABBR2 | O75899 | 3/20 | 0.41 |
| ▸ | GABBR1 | Q9UBS5 | 3/20 | 0.41 |
| ▸ | UTS2R | Q9UKP6 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.39 |
| ▸ | NPC1 | O15118 | 2/20 | 0.39 |
| ▸ | RAB9A | P51151 | 2/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | ENPP3 | O14638 | 1/20 | 0.38 |
| ▸ | ENPP1 | P22413 | 1/20 | 0.38 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.38 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.38 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | EGFR | P00533 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1671650 | 0.99 | CES2 (0.41) | CES2CES1GABRB1GABRB2GABBR2 | |
| SCHEMBL19042451 | 0.90 | CES2 (0.41) | CES2CES1GABRB1GABRB2GABBR2 | |
| SCHEMBL18785998 | 0.88 | ALDH1A1 (0.38) | GABRB1GABRB2SMN1; SMN2NPC1RAB9A | |
| SCHEMBL1671648 | 0.88 | CES2 (0.40) | CES2CES1GABRB1GABRB2GABBR2 | |
| SCHEMBL12912787 | 0.87 | KDM4E (0.42) | CES2CES1GABRB1GABRB2GABBR2 | |
| SCHEMBL18785995 | 0.85 | MEN1 (0.43) | GABRB1GABRB2GABBR2GABBR1MEN1 | |
| SCHEMBL7602480 | 0.85 | GABBR2 (0.43) | CES2CES1GABRB1GABRB2GABBR2 | |
| SCHEMBL14802917 | 0.84 | CES2 (0.41) | CES2CES1GABRB1GABRB2GABBR2 | |
| SCHEMBL12119777 | 0.84 | MAPT (0.31) | GABBR2GABBR1SMN1; SMN2NPC1RAB9A | |
| SCHEMBL963504 | 0.83 | GABRB1 (0.43) | CES2CES1GABRB1GABRB2GABBR2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 531 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7638260-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | claimed |
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-04-27 | — | — | US | disclosed |
| US-11561472-B2 | Radiation sensitive composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| EP-3309614-B1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL CORP (JP) | 2021-11-10 | — | — | EP | disclosed |
| CN-106610566-B | Chemically amplified positive resist composition and patterning method | 信越化学工业株式会社 | 2021-10-08 | — | — | CN | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070264596-A1 | Thermal acid generator, resist undercoat material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070264596-A1 | Thermal acid generator, resist undercoat material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| EP-1829850-A2 | Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070148594-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-06-28 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | CES2 2507/4885CES1 3529/4885GABRB1 587/4885 |
| US-11561472-B2 | Radiation sensitive composition | RER1, RAD1, RAD51 | CES2 333/4885CES1 775/4885GABRB1 3503/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | CES2 578/4885CES1 552/4885GABRB1 3382/4885 |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | XRCC6, RAD50, XRCC5 | CES2 2549/4885CES1 1919/4885GABRB1 3838/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.