SCHEMBL384657

SCHEMBL384657

Cc1ccc(S(=O)(=O)C(=[N+]=[N-])C(=O)C(C)(C)C)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.44
KMT2A Q03164 2/20 0.44
MEN1 O00255 1/20 0.44
LMNA P02545 3/20 0.39
GAA P10253 2/20 0.38
POLB P06746 2/20 0.37
HTT P42858 1/20 0.37
NOD2 Q9HC29 1/20 0.37
CA1 P00915 2/20 0.37
CA2 P00918 2/20 0.37
MMP1 P03956 1/20 0.37
MMP2 P08253 1/20 0.37
MMP9 P14780 1/20 0.37
MMP8 P22894 1/20 0.37
MMP13 P45452 1/20 0.37
CYP3A4 P08684 1/20 0.37
CYP2C9 P11712 1/20 0.37
CYP2C19 P33261 1/20 0.37
RECQL P46063 1/20 0.36
CA12 O43570 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL563505 0.85 HSD11B1 (0.47) ALDH1A1KMT2ALMNAPOLBHTT
SCHEMBL2863852 0.81 ALDH1A1 (0.43) ALDH1A1KMT2AMEN1LMNAGAA
SCHEMBL1089447 0.81 ALDH1A1 (0.43) ALDH1A1KMT2AMEN1LMNAGAA
SCHEMBL7692516 0.81 MMP2 (0.39) ALDH1A1KMT2AMEN1LMNAGAA
SCHEMBL7717471 0.81 MAPT (0.51) ALDH1A1KMT2AMEN1LMNAPOLB
SCHEMBL1604082 0.80 KAT6A (0.42) ALDH1A1LMNAGAAHTTNOD2
SCHEMBL383775 0.80 ALDH1A1 (0.41) ALDH1A1KMT2AMEN1LMNAGAA
SCHEMBL9010795 0.79 CES2 (0.48) ALDH1A1KMT2ALMNAGAAPOLB
SCHEMBL7696164 0.79 MMP2 (0.42) ALDH1A1KMT2AMEN1LMNAGAA
SCHEMBL5702422 0.78 HSD11B1 (0.33) ALDH1A1KMT2AMEN1LMNAGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 633 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
CN-119998727-A Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance YC化学制品株式会社 2025-05-13 CN claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP claimed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US claimed
US-20070202436-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-30 US claimed
EP-4667537-A1 PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-12-24 EP disclosed
US-20250382500-A1 PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO LTD (JP) 2025-12-18 US disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP disclosed
US-20250218775-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC. 2025-07-03 US disclosed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed
US-5468589-A Heat resistant, photosensitive patterns WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1995-11-21 US disclosed
EP-0679951-A1 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1995-11-02 EP disclosed
US-5350660-A Chemical amplified resist material containing photosensitive compound capable of generating an acid and specific polystyrene copolymer having functional groups that become alkali-soluble under an acid atmosphere WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1994-09-27 US disclosed
EP-0520642-A1 Resist material and pattern formation process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1992-12-30 EP disclosed
EP-0440374-A2 Chemical amplified resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1991-08-07 EP disclosed