SCHEMBL383775

SCHEMBL383775

Cc1ccc(S(=O)(=O)C(=[N+]=[N-])C(=O)OC(C)(C)C)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.41
KMT2A Q03164 4/20 0.41
MEN1 O00255 3/20 0.41
LMNA P02545 3/20 0.37
CA1 P00915 3/20 0.35
CA2 P00918 3/20 0.35
CA12 O43570 2/20 0.35
CA9 Q16790 2/20 0.35
CA14 Q9ULX7 1/20 0.35
GAA P10253 1/20 0.35
POLB P06746 2/20 0.35
HTT P42858 1/20 0.35
NOD2 Q9HC29 1/20 0.35
MMP13 P45452 2/20 0.34
MMP1 P03956 1/20 0.34
MMP2 P08253 1/20 0.34
MMP9 P14780 1/20 0.34
MMP8 P22894 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2C9 P11712 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1089508 0.87 HSD11B1 (0.41) ALDH1A1KMT2ALMNACA1CA2
SCHEMBL27587801 0.83 PSIP1 (0.43) CA1CA2CA12CA9CA14
SCHEMBL384657 0.80 ALDH1A1 (0.44) ALDH1A1KMT2AMEN1LMNACA1
SCHEMBL2863852 0.78 ALDH1A1 (0.43) ALDH1A1KMT2AMEN1LMNACA1
SCHEMBL1089447 0.78 ALDH1A1 (0.43) ALDH1A1KMT2AMEN1LMNACA1
SCHEMBL29398676 0.76 KMT2A (0.44) ALDH1A1KMT2AMEN1LMNACA1
SCHEMBL9010795 0.75 CES2 (0.48) ALDH1A1KMT2ALMNAGAAPOLB
SCHEMBL1089095 0.74 ADORA3 (0.40) ALDH1A1KMT2AMEN1LMNAGAA
SCHEMBL563251 0.74 ALDH1A1 (0.40) ALDH1A1KMT2AMEN1LMNACA1
SCHEMBL2529863 0.72 ALDH1A1 (0.37) ALDH1A1KMT2AMEN1LMNACA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 482 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
CN-119998727-A Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance YC化学制品株式会社 2025-05-13 CN claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP claimed
US-20250382500-A1 PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO LTD (JP) 2025-12-18 US disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP disclosed
US-20250216790-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC., 2025-07-03 US disclosed
US-20250216782-A1 MASKING PROCESS USING SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216763-A1 ANTI-SPACER MASKING PROCESS USING RESIST LAYER WITH SOLUBILITY SHIFTING AGENT TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed
US-5670299-A COATING A PHOTORESISTS POLYMER ON A SUBSTRATE, DEVELOPMENT AND HEAT TREATMENT WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1997-09-23 US disclosed
EP-0679951-B1 Positive resist composition TOKYO OHKA KOGYO CO LTD (JP) 1997-01-15 EP disclosed
EP-0749046-A1 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1996-12-18 EP disclosed
EP-0749044-A2 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1996-12-18 EP disclosed
US-5468589-A Heat resistant, photosensitive patterns WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1995-11-21 US disclosed
EP-0679951-A1 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1995-11-02 EP disclosed
EP-0520642-A1 Resist material and pattern formation process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1992-12-30 EP disclosed