Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 5/20 | 0.42 |
| ▸ | HPGD | P15428 | 4/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.40 |
| ▸ | GAA | P10253 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | USP2 | O75604 | 1/20 | 0.40 |
| ▸ | EIF4H | Q15056 | 1/20 | 0.40 |
| ▸ | CES2 | O00748 | 1/20 | 0.40 |
| ▸ | CES1 | P23141 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.39 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.39 |
| ▸ | POLB | P06746 | 1/20 | 0.39 |
| ▸ | PTPN2 | P17706 | 1/20 | 0.38 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.38 |
| ▸ | PTPN6 | P29350 | 1/20 | 0.38 |
| ▸ | PTPN11 | Q06124 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1671715 | 0.99 | KMT2A (0.41) | KMT2AHPGDHSD17B10GAAHTT | |
| SCHEMBL1671714 | 0.88 | KMT2A (0.39) | KMT2AHPGDHSD17B10GAAHTT | |
| SCHEMBL12345949 | 0.84 | KMT2A (0.44) | KMT2AHPGDHSD17B10GAAHTT | |
| SCHEMBL18775691 | 0.78 | HPGD (0.41) | KMT2AHPGDHSD17B10GAAHTT | |
| SCHEMBL17266482 | 0.77 | ALDH1A1 (0.43) | KMT2AHPGDHSD17B10HTTMEN1 | |
| SCHEMBL15216288 | 0.76 | ABCC9 (0.31) | — | |
| SCHEMBL382685 | 0.76 | TSHR (0.47) | KMT2AHSD17B10HTTMEN1TSHR | |
| SCHEMBL12507698 | 0.76 | KMT2A (0.46) | KMT2AHPGDHSD17B10GAAHTT | |
| SCHEMBL15084177 | 0.75 | ALDH1A1 (0.43) | KMT2AHSD17B10HTTMEN1TSHR | |
| SCHEMBL482458 | 0.75 | TSHR (0.46) | KMT2AHSD17B10HTTMEN1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 216 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7638260-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | claimed |
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-04-27 | — | — | US | disclosed |
| US-11561472-B2 | Radiation sensitive composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| EP-3309614-B1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL CORP (JP) | 2021-11-10 | — | — | EP | disclosed |
| CN-106610566-B | Chemically amplified positive resist composition and patterning method | 信越化学工业株式会社 | 2021-10-08 | — | — | CN | disclosed |
| CN-109563371-B | Polysiloxane composition comprising acetal-protected silanol groups | 日产化学株式会社 | 2021-09-21 | — | — | CN | disclosed |
| CN-106444288-B | Chemically amplified positive resist composition and pattern forming method | 信越化学工业株式会社 | 2021-04-09 | — | — | CN | disclosed |
| EP-3163374-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-12-02 | — | — | EP | disclosed |
| US-10815572-B2 | Chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-27 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070264596-A1 | Thermal acid generator, resist undercoat material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070264596-A1 | Thermal acid generator, resist undercoat material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| EP-1829850-A2 | Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070148594-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-06-28 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | KMT2A 83/4885HPGD 3343/4885HSD17B10 2535/4885 |
| US-11561472-B2 | Radiation sensitive composition | RER1, RAD1, RAD51 | KMT2A 853/4885HPGD 3473/4885HSD17B10 1633/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | KMT2A 1434/4885HPGD 3516/4885HSD17B10 1470/4885 |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | XRCC6, RAD50, XRCC5 | KMT2A 3292/4885HPGD 1428/4885HSD17B10 698/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.