Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 8/20 | 0.39 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 6/20 | 0.38 |
| ▸ | SLC15A1 | P46059 | 1/20 | 0.36 |
| ▸ | FAAH | O00519 | 1/20 | 0.36 |
| ▸ | FDPS | P14324 | 1/20 | 0.35 |
| ▸ | ACE2 | Q9BYF1 | 1/20 | 0.34 |
| ▸ | GPR84 | Q9NQS5 | 2/20 | 0.33 |
| ▸ | SLC1A3 | P43003 | 1/20 | 0.33 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.33 |
| ▸ | SLC1A1 | P43005 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1783613 | 0.86 | CA2 (0.41) | CA2MAPK1CA1SLC15A1FAAH | |
| SCHEMBL1781431 | 0.81 | CA2 (0.38) | CA2MAPK1CA1SLC15A1FAAH | |
| SCHEMBL1782449 | 0.80 | CA1 (0.48) | CA2CA1FAAHFDPSACE2 | |
| SCHEMBL19394028 | 0.78 | MEN1 (0.32) | CA2MAPK1FDPS | |
| SCHEMBL1782539 | 0.76 | CA2 (0.40) | CA2MAPK1CA1SLC15A1FAAH | |
| SCHEMBL4054781 | 0.76 | ABCB1 (0.44) | CA2MAPK1CA1SLC15A1FAAH | |
| SCHEMBL13037047 | 0.75 | ACE2 (0.40) | CA2MAPK1CA1SLC15A1FAAH | |
| Bicarbonate SCHEMBL6442737 | 0.74 | CA2 (0.52) | CA2MAPK1CA1SLC15A1FDPS | |
| SCHEMBL3500277 | 0.73 | CA2 (0.52) | CA2MAPK1CA1ACE2GPR84 | |
| SCHEMBL6250281 | 0.73 | CA2 (0.52) | CA2MAPK1CA1ACE2GPR84 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 968 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3558917-B1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2024-01-24 | — | — | EP | claimed |
| US-11450805-B2 | Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same | MERCK PATENT GMBH (DE) | 2022-09-20 | — | — | US | claimed |
| US-20200044158-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2020-02-06 | — | — | US | claimed |
| EP-3558917-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | Merck Patent GmbH (DE) | 2019-10-30 | — | — | EP | claimed |
| WO-2018115043-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2018-06-28 | — | — | WO | claimed |
| EP-4747233-A2 | COMPOUNDS, COMPOSITIONS CONTAINING COMPOUNDS, AND METHODS OF MANUFACTURING RESIST MEMBRANES | Merck Patent GmbH (DE) | 2026-05-27 | — | — | EP | disclosed |
| US-12629718-B2 | Film forming method and article manufacturing method | CANON KABUSHIKI KAISHA (JP) | 2026-05-19 | — | — | US | disclosed |
| US-20260133493-A1 | RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND METHOD FOR PRODUCING THE POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2026-05-14 | — | — | US | disclosed |
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260118757-A1 | RADIATION-SENSITIVE RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-20260118751-A1 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION COMPRISING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-20260110966-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-23 | — | — | US | disclosed |
| EP-1122746-A1 | Composition for film formation and insulating film | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1099719-A1 | Diyne-containing (co) polymer, processes for producing the same, and cured film | JSR Corporation (JP) | 2001-05-16 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |
| EP-1058274-A1 | Composition for film formation and material for insulating film formation | JSR Corporation (JP) | 2000-12-06 | — | — | EP | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| US-4835445-A | Fluorescent display device | FUTABA DENSHI KOGHO K.K. (JP) | 1989-05-30 | — | — | US | disclosed |
| US-4012554-A | Single coating record system-solvent loss produces color | NCR CORPORATION (US) | 1977-03-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260110966-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | RER1, SMC2, SMC1A | CA2 3520/4885MAPK1 1908/4885CA1 2684/4885 |
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | SRSF1, MACF1, SRPK1 | CA2 3173/4885MAPK1 2597/4885CA1 967/4885 |
| US-11450805-B2 | Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same | TYR, CD99, SRM | CA2 4584/4885MAPK1 3361/4885CA1 3060/4885 |
| US-12629718-B2 | Film forming method and article manufacturing method | AUP1, VCL, RHOA | CA2 3838/4885MAPK1 4519/4885CA1 2152/4885 |
| US-20260118757-A1 | RADIATION-SENSITIVE RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SLC39A14, HCN4, SLC11A2 | CA2 197/4885MAPK1 1991/4885CA1 813/4885 |
| US-20200044158-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | TYR, TRPA1, CD99 | CA2 4598/4885MAPK1 3649/4885CA1 3072/4885 |
| US-20260118751-A1 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION COMPRISING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | LBR, RER1, MNS1 | CA2 2665/4885MAPK1 1790/4885CA1 2274/4885 |
| US-20260133493-A1 | RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND METHOD FOR PRODUCING THE POLYMER, AND COMPOUND | RAD51, RAD1, MRE11 | CA2 2822/4885MAPK1 2591/4885CA1 1145/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.