SCHEMBL4866299

SCHEMBL4866299

C=C(CCCO)C(=O)O.CC(C)(C)C=C(C=CC(=O)O)C(=O)O

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
TET2 Q6N021 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4853550 0.96 GPR84 (0.31) TET2
Maleic Acid SCHEMBL2013518 0.82 CAMK2A (0.42) TET2
SCHEMBL7053346 0.79 TSHR (0.43)
Maleic Acid SCHEMBL2013642 0.77 GPR84 (0.43) TET2
SCHEMBL523411 0.73 CAMK2A (0.52) TET2
SCHEMBL16091 0.73
Acrylic Acid SCHEMBL1411416 0.71 ALOX15 (0.54) TET2
Maleic Acid SCHEMBL9502630 0.71 TSHR (0.43) TET2
Acetone SCHEMBL8337322 0.71 CAMK2A (0.46) TET2
SCHEMBL16043984 0.70 TBXAS1 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7419760-B2 Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern HYNIX SEMICONDUCTOR INC. (KR) 2008-09-02 US claimed
US-7288364-B2 Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same HYNIX SEMICONDUCTOR INC. (KR) 2007-10-30 US claimed
US-20060063104-A1 Top anti-reflective coating composition and method for forming the pattern of a semiconductor device using the same HYNIX SEMICONDUCTOR INC. (KR) 2006-03-23 US claimed
US-20060046184-A1 Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same HYNIX SEMICONDUCTOR INC. (KR) 2006-03-02 US claimed
US-7419760-B2 Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern HYNIX SEMICONDUCTOR INC. (KR) 2008-09-02 US disclosed
US-7326525-B2 Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same HYNIX SEMICONDUCTOR INC. (KR) 2008-02-05 US disclosed
US-7288364-B2 Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same HYNIX SEMICONDUCTOR INC. (KR) 2007-10-30 US disclosed
US-20060063104-A1 Top anti-reflective coating composition and method for forming the pattern of a semiconductor device using the same HYNIX SEMICONDUCTOR INC. (KR) 2006-03-23 US disclosed
US-20060046184-A1 Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same HYNIX SEMICONDUCTOR INC. (KR) 2006-03-02 US disclosed
US-20060008732-A1 Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same HYNIX SEMICONDUCTOR INC. (KR) 2006-01-12 US disclosed