Sugi Predict

Sugi Predict / Compounds / SCHEMBL515758

SCHEMBL515758

SCHEMBL515758

O=C(OCCCCC(F)(F)C(F)(F)S(=O)(=O)[O-])C12CC3CC(CC(C3)C1)C2.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 7/20 0.39
▸ GAA P10253 2/20 0.39
▸ SMN1; SMN2 Q16637 1/20 0.38
▸ RECQL P46063 1/20 0.37
▸ KMT2A Q03164 1/20 0.37
▸ LMNA P02545 1/20 0.36
▸ CYP17A1 P05093 2/20 0.35
▸ CYP19A1 P11511 2/20 0.35
▸ KDM4E B2RXH2 1/20 0.35
▸ CYP1A2 P05177 1/20 0.35
▸ CYP3A4 P08684 1/20 0.35
▸ CYP2D6 P10635 1/20 0.35
▸ CYP2C9 P11712 1/20 0.35
▸ CYP2C19 P33261 1/20 0.35
▸ POLB P06746 1/20 0.32
▸ TSHR P16473 1/20 0.32
▸ MAPK1 P28482 1/20 0.32
▸ MAPT P10636 1/20 0.32
▸ NPSR1 Q6W5P4 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2887913 0.93 ALDH1A1 (0.40) ALDH1A1GAASMN1; SMN2RECQLKMT2A
SCHEMBL1771529 0.89 ALDH1A1 (0.39) ALDH1A1GAASMN1; SMN2RECQLKMT2A
SCHEMBL14696393 0.87 ALDH1A1 (0.37) ALDH1A1GAASMN1; SMN2KMT2ACYP17A1
SCHEMBL893421 0.82 ALDH1A1 (0.41) ALDH1A1GAASMN1; SMN2RECQLKMT2A
SCHEMBL3454541 0.81 ALDH1A1 (0.43) ALDH1A1GAASMN1; SMN2RECQLKMT2A
SCHEMBL1771447 0.81 TDP1 (0.36) ALDH1A1SMN1; SMN2KMT2ATSHRMAPT
SCHEMBL544306 0.81 ALDH1A1 (0.43) ALDH1A1GAASMN1; SMN2RECQLKMT2A
SCHEMBL515759 0.80 ALDH1A1 (0.43) ALDH1A1GAASMN1; SMN2RECQLKMT2A
SCHEMBL3454497 0.79 ALDH1A1 (0.45) ALDH1A1GAASMN1; SMN2RECQLKMT2A
SCHEMBL1771531 0.79 ALDH1A1 (0.39) ALDH1A1GAASMN1; SMN2RECQLKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8889888-B2 Sulfonic acid salt and derivative thereof, photo-acid generator, and process for production of sulfonic acid salt CENTRAL GLASS COMPANY, LIMITED (JP) 2014-11-18 — — US claimed
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt CENTRAL GLASS COMPANY, LIMITED (JP) 2011-05-12 — — US claimed
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2026-02-24 — — US disclosed
US-12386260-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2025-08-12 — — US disclosed
WO-2024176973-A1 METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION 東京応化工業株式会社 2024-08-29 — — WO disclosed
US-20220299873-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2022-09-22 — — US disclosed
US-20220229367-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2022-07-21 — — US disclosed
WO-2022091731-A1 METAL COMPLEX, COMPOSITION, RESIST MATERIAL, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE DIC株式会社 2022-05-05 — — WO disclosed
US-11204552-B2 Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2021-12-21 — — US disclosed
US-20210181627-A1 PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2021-06-17 — — US disclosed
US-20210063872-A1 PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2021-03-04 — — US disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 — — US disclosed
US-20130089817-A1 PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-04-11 — — US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 — — US disclosed
US-20120183902-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-07-19 — — US disclosed
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-14 — — US disclosed
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-04-05 — — US disclosed
US-20120028189-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-02-02 — — US disclosed
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt CENTRAL GLASS COMPANY, LIMITED (JP) 2011-05-12 — — US disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND RAD1, RER1, RPA1 ALDH1A1 806/4885GAA 2742/4885SMN1; SMN2 1552/4885
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND RER1, RFT1, RAD51 ALDH1A1 1635/4885GAA 2512/4885SMN1; SMN2 3699/4885
US-20120028189-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND RER1, RAD51, TERB1 ALDH1A1 1091/4885GAA 2487/4885SMN1; SMN2 3842/4885
US-11204552-B2 Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent NOS1, ADCY1, IFNAR1 ALDH1A1 243/4885GAA 4232/4885SMN1; SMN2 3352/4885
US-20210181627-A1 PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION RIF1, AP3M1, MRE11 ALDH1A1 3272/4885GAA 4547/4885SMN1; SMN2 2562/4885
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt ASIC1, FGFR1, PFAS ALDH1A1 1719/4885GAA 1616/4885SMN1; SMN2 2668/4885
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound RAD51, RER1, RAD1 ALDH1A1 345/4885GAA 3515/4885SMN1; SMN2 926/4885
US-20220299873-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND RER1, RAD51, RFT1 ALDH1A1 1243/4885GAA 3151/4885SMN1; SMN2 724/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.