SCHEMBL515861

SCHEMBL515861

CC(C)(C)c1ccc([I+]c2ccc(C(C)(C)C)cc2)cc1.O=C([O-])c1ccc(C(F)(F)F)cc1O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.39
TDP1 Q9NUW8 2/20 0.39
CES2 O00748 2/20 0.39
POLB P06746 1/20 0.39
TRPV1 Q8NER1 1/20 0.38
ALDH1A1 P00352 3/20 0.37
HPGD P15428 3/20 0.37
HSD17B10 Q99714 3/20 0.37
CFTR P13569 1/20 0.37
ALOX15 P16050 1/20 0.37
ESRRG P62508 1/20 0.36
RAPGEF3 O95398 1/20 0.36
RAPGEF4 Q8WZA2 1/20 0.36
SIRT1 Q96EB6 1/20 0.36
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
USP2 O75604 1/20 0.36
CYP2C19 P33261 1/20 0.36
NR1H4 Q96RI1 1/20 0.36
MAPT P10636 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Salicylic Acid SCHEMBL515584 0.80 KDM4E (0.56) KDM4EPOLBALDH1A1HPGDHSD17B10
Zinc Ion SCHEMBL10915758 0.79 TDP1 (0.53) KDM4ETDP1POLBALDH1A1HPGD
SCHEMBL9118409 0.79 TDP1 (0.53) KDM4ETDP1POLBALDH1A1HPGD
SCHEMBL3681380 0.79 TDP1 (0.53) KDM4ETDP1POLBALDH1A1HPGD
SCHEMBL9191843 0.79 TDP1 (0.53) KDM4ETDP1POLBALDH1A1HPGD
Salicylic Acid SCHEMBL547830 0.77 ALDH1A1 (0.51) KDM4ETDP1POLBALDH1A1HPGD
Trifluoroacetic Acid SCHEMBL1002370 0.76 HDAC1 (0.40) POLBTRPV1ALDH1A1MEN1KMT2A
SCHEMBL29242227 0.76 HDAC1 (0.42) POLBTRPV1ALDH1A1SIRT1MEN1
Acetic Acid SCHEMBL548374 0.74 HDAC1 (0.44) POLBALDH1A1SIRT1MEN1KMT2A
SCHEMBL516518 0.73 KDM4E (0.43) KDM4ETDP1CES2POLBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2479614-B1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORP (JP) 2019-07-24 EP disclosed
EP-2781959-B1 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORP (JP) 2019-04-24 EP disclosed
US-9513548-B2 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORPORATION (JP) 2016-12-06 US disclosed
US-20160179003-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2016-06-23 US disclosed
US-9261780-B2 Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound JSR CORPORATION (JP) 2016-02-16 US disclosed
US-9040221-B2 Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound JSR CORPORATION (JP) 2015-05-26 US disclosed
EP-2781959-A2 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR Corporation (JP) 2014-09-24 EP disclosed
US-8802350-B2 Photoresist composition, resist-pattern forming method, polymer, and compound JSR CORPORATION (JP) 2014-08-12 US disclosed
US-20140212813-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2014-07-31 US disclosed
US-8728706-B2 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORPORATION (JP) 2014-05-20 US disclosed
US-20130143160-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND JSR CORPORATION (JP) 2013-06-06 US disclosed
US-20130122426-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND JSR CORPORATION (JP) 2013-05-16 US disclosed
US-20130022912-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND JSR CORPORATION (JP) 2013-01-24 US disclosed
US-20120258402-A1 PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-10-11 US disclosed
US-20120237875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR CORPORATION (JP) 2012-09-20 US disclosed
EP-2479614-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND JSR Corporation (JP) 2012-07-25 EP disclosed
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120082935-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FORMED USING THE SAME JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120034560-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND POLYMER JSR CORPORATION (JP) 2012-02-09 US disclosed
US-20120028189-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-02-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120258402-A1 PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND FRG1, NPY4R, RER1 KDM4E 153/4885TDP1 4102/4885CES2 2928/4885
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND RER1, RFT1, RAD51 KDM4E 4523/4885TDP1 718/4885CES2 2204/4885
US-20120028189-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND RER1, RAD51, TERB1 KDM4E 1074/4885TDP1 1619/4885CES2 2777/4885
US-20130022912-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND RER1, REV1, RAD51 KDM4E 3680/4885TDP1 998/4885CES2 1723/4885
US-20130122426-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND RER1, RFTN1, FRG1 KDM4E 3374/4885TDP1 869/4885CES2 2682/4885
US-20120237875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND RER1, RDX, PRXL2A KDM4E 2387/4885TDP1 2358/4885CES2 2940/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.