Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.43 |
| ▸ | HPGD | P15428 | 3/20 | 0.43 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.43 |
| ▸ | CES2 | O00748 | 2/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.41 |
| ▸ | USP2 | O75604 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | KCNMA1 | Q12791 | 1/20 | 0.39 |
| ▸ | P2RX1 | P51575 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
| ▸ | CRHBP | P24387 | 1/20 | 0.38 |
| ▸ | RAB9A | P51151 | 1/20 | 0.38 |
| ▸ | CRHR2 | Q13324 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4962446 | 0.78 | CES2 (0.48) | ALDH1A1CES2NPC1CRHBPRAB9A | |
| Salicylic Acid SCHEMBL109218 | 0.77 | KDM4E (0.70) | KDM4EALDH1A1HPGDHSD17B10POLB | |
| SCHEMBL4961284 | 0.76 | CES2 (0.57) | ALDH1A1HPGDCES2POLBMAPT | |
| SCHEMBL115659 | 0.76 | ALDH1A1 (0.65) | KDM4EALDH1A1HPGDHSD17B10CES2 | |
| SCHEMBL4961644 | 0.75 | LMNA (0.49) | CYP2C19CNR2TAS2R14GAA | |
| SCHEMBL27866247 | 0.74 | ALDH1A1 (0.62) | KDM4EALDH1A1HPGDHSD17B10CES2 | |
| SCHEMBL1451777 | 0.74 | MAPT (0.57) | KDM4EALDH1A1HPGDHSD17B10CES2 | |
| SCHEMBL29540816 | 0.74 | MAPT (0.57) | KDM4EALDH1A1HPGDHSD17B10CES2 | |
| SCHEMBL515861 | 0.73 | KDM4E (0.39) | KDM4EALDH1A1HPGDHSD17B10CES2 | |
| Salicylic Acid SCHEMBL30395570 | 0.73 | LMNA (0.44) | KDM4EALDH1A1HPGDPOLBMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2479614-B1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND | JSR CORP (JP) | 2019-07-24 | — | — | EP | disclosed |
| EP-2781959-B1 | Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound | JSR CORP (JP) | 2019-04-24 | — | — | EP | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9513548-B2 | Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound | JSR CORPORATION (JP) | 2016-12-06 | — | — | US | disclosed |
| US-20160179003-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND | JSR CORPORATION (JP) | 2016-06-23 | — | — | US | disclosed |
| US-9261780-B2 | Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound | JSR CORPORATION (JP) | 2016-02-16 | — | — | US | disclosed |
| US-9040221-B2 | Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound | JSR CORPORATION (JP) | 2015-05-26 | — | — | US | disclosed |
| CN-102498439-B | Radiation-sensitive resin composition, method for forming resist pattern, polymer, and polymerizable compound | JSR CORP | 2015-03-11 | — | — | CN | disclosed |
| EP-2781959-A2 | Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound | JSR Corporation (JP) | 2014-09-24 | — | — | EP | disclosed |
| US-20130122426-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-05-16 | — | — | US | disclosed |
| US-20130022912-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120258402-A1 | PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2012-10-11 | — | — | US | disclosed |
| US-20120237875-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND | JSR CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| EP-2479614-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND | JSR Corporation (JP) | 2012-07-25 | — | — | EP | disclosed |
| CN-102498439-A | Radiation-sensitive resin composition, method for forming resist pattern, polymer, and polymerizable compound | JSR CORP | 2012-06-13 | — | — | CN | disclosed |
| US-20120082934-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120082935-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FORMED USING THE SAME | JSR CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120034560-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND POLYMER | JSR CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| US-20120028189-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2012-02-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120258402-A1 | PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND | FRG1, NPY4R, RER1 | KDM4E 153/4885ALDH1A1 2682/4885HPGD 3981/4885 |
| US-20120082934-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND | RER1, RFT1, RAD51 | KDM4E 4523/4885ALDH1A1 1635/4885HPGD 3006/4885 |
| US-20120028189-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND | RER1, RAD51, TERB1 | KDM4E 1074/4885ALDH1A1 1091/4885HPGD 2809/4885 |
| US-20130022912-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND | RER1, REV1, RAD51 | KDM4E 3680/4885ALDH1A1 703/4885HPGD 591/4885 |
| US-20130122426-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | RER1, RFTN1, FRG1 | KDM4E 3374/4885ALDH1A1 3926/4885HPGD 3133/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | KDM4E 4396/4885ALDH1A1 2183/4885HPGD 3630/4885 |
| US-20120237875-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND POLYMERIZABLE COMPOUND | RER1, RDX, PRXL2A | KDM4E 2387/4885ALDH1A1 1383/4885HPGD 1905/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.