SCHEMBL546255

SCHEMBL546255

O=C(C[S+]1CCCC1)c1ccccc1.O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)[O-])c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.35
MEN1 O00255 2/20 0.35
TP53 P04637 1/20 0.33
TSHR P16473 1/20 0.33
NPC1 O15118 2/20 0.32
RAB9A P51151 1/20 0.32
RXFP1 Q9HBX9 1/20 0.32
LMNA P02545 1/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2D6 P10635 1/20 0.32
POLB P06746 1/20 0.32
SCN1A P35498 1/20 0.32
SCN2A Q99250 1/20 0.32
SCN3A Q9NY46 1/20 0.32
MGLL Q99685 1/20 0.31
PRKCA P17252 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL547057 0.86 ELANE (0.37) TSHRRAB9ARXFP1LMNACYP1A2
SCHEMBL482457 0.83 TSHR (0.44) KMT2AMEN1TP53TSHRNPC1
Trifluoromethanesulfonic Acid SCHEMBL3096657 0.81 MAPT (0.37) KMT2AMEN1LMNAPOLB
SCHEMBL246106 0.77 TSHR (0.39) KMT2ATP53TSHRNPC1RAB9A
SCHEMBL1671825 0.76 PDCD1 (0.49) KMT2ATP53TSHR
SCHEMBL546257 0.75 CYP3A4 (0.36) KMT2AMEN1
SCHEMBL482416 0.75 CA2 (0.35) KMT2AMEN1POLB
SCHEMBL2130940 0.75 SLC2A1 (0.35)
SCHEMBL4191335 0.74 CA2 (0.34) KMT2AMEN1POLB
SCHEMBL382685 0.73 TSHR (0.47) KMT2AMEN1TP53TSHRNPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-9023582-B2 Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition SAMSUNG DISPLAY CO., LTD. (KR) 2015-05-05 US disclosed
EP-2146247-B1 Resist patterning process and manufacturing photo mask SHINETSU CHEMICAL CO (JP) 2015-04-15 EP disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-20140141372-A1 PHOTOSENSITIVE POLYMER, RESIST COMPOSITION INCLUDING THE PHOTOSENSITIVE POLYMER AND METHOD OF PREPARING RESIST PATTERN USING THE RESIST COMPOSITION SAMSUNG DISPLAY CO., LTD. (KR) 2014-05-22 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
EP-2000851-A1 Photomask blank, resist pattern forming process, and photomask preparation process Shin-Etsu Chemical Co., Ltd. (JP) 2008-12-10 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20080008962-A1 Polymerizable ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed
US-20080008965-A1 Ester compounds and their preparation, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process MDM4, MUS81, NOP2 KMT2A 2370/4885MEN1 1226/4885TP53 2088/4885
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 KMT2A 147/4885MEN1 2210/4885TP53 4670/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST KMT2A 83/4885MEN1 2788/4885TP53 4610/4885
US-20080008965-A1 Ester compounds and their preparation, polymers, resist compositions and patterning process ESR1, H1-2, H1-4 KMT2A 322/4885MEN1 647/4885TP53 3662/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 KMT2A 1964/4885MEN1 3960/4885TP53 4475/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.