Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES1 | P23141 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.35 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 3/20 | 0.34 |
| ▸ | MLYCD | O95822 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 2/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | PTGS2 | P35354 | 3/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL546379 | 1.00 | CES1 (0.40) | CES1ALDH1A1KMT2AMEN1GAA | |
| SCHEMBL4895556 | 0.89 | GAA (0.37) | CES1ALDH1A1KMT2AMEN1GAA | |
| SCHEMBL547228 | 0.87 | LMNA (0.43) | CES1LMNAMAPK1L3MBTL1TSHR | |
| SCHEMBL547229 | 0.87 | LMNA (0.43) | CES1LMNAMAPK1L3MBTL1TSHR | |
| SCHEMBL546658 | 0.85 | CA2 (0.38) | CES1ALDH1A1KMT2AMEN1GAA | |
| SCHEMBL383739 | 0.85 | CA2 (0.38) | CES1ALDH1A1KMT2AMEN1GAA | |
| SCHEMBL965125 | 0.85 | PKM (0.47) | KMT2AMEN1MAPTLMNAMAPK1 | |
| SCHEMBL16593512 | 0.85 | CES1 (0.41) | CES1ALDH1A1KMT2AMEN1GAA | |
| SCHEMBL12293171 | 0.85 | CES1 (0.41) | CES1ALDH1A1KMT2AMEN1GAA | |
| SCHEMBL5442975 | 0.84 | KMT2A (0.35) | CES1ALDH1A1KMT2AMEN1GAA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| EP-4167028-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-04-19 | — | — | EP | disclosed |
| US-20220382157-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-12-01 | — | — | US | disclosed |
| US-11460774-B2 | Photosensitive resin composition, photosensitive dry film, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-10-04 | — | — | US | disclosed |
| EP-4050054-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | Shin-Etsu Chemical Co., Ltd. (JP) | 2022-08-31 | — | — | EP | disclosed |
| US-11256174-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-02-22 | — | — | US | disclosed |
| EP-3671345-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2022-02-02 | — | — | EP | disclosed |
| EP-3163374-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-12-02 | — | — | EP | disclosed |
| US-10815572-B2 | Chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-27 | — | — | US | disclosed |
| US-7569324-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7527912-B2 | Photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | CES1 4812/4885ALDH1A1 4502/4885KMT2A 2370/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | CES1 2534/4885ALDH1A1 3081/4885KMT2A 147/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | CES1 3529/4885ALDH1A1 2781/4885KMT2A 83/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | CES1 2150/4885ALDH1A1 1348/4885KMT2A 1964/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.