SCHEMBL547035

SCHEMBL547035

Cc1ccc(C(=NOS(=O)(=O)c2ccccc2)C(F)(F)F)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 6/20 0.44
KMT2A Q03164 3/20 0.41
MEN1 O00255 2/20 0.41
HSD11B1 P28845 1/20 0.41
KDM4E B2RXH2 4/20 0.41
ALDH1A1 P00352 9/20 0.40
XBP1 P17861 4/20 0.40
MPI P34949 4/20 0.40
NPSR1 Q6W5P4 4/20 0.40
HSP90AA1 P07900 2/20 0.40
TDP1 Q9NUW8 2/20 0.40
LMNA P02545 6/20 0.38
S1PR2 O95136 3/20 0.38
HTT P42858 3/20 0.38
RAB9A P51151 2/20 0.38
PKM P14618 2/20 0.38
OPRM1 P35372 1/20 0.38
OPRD1 P41143 1/20 0.38
MAPK1 P28482 2/20 0.37
TP53 P04637 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL547034 1.00 MAPT (0.44) MAPTKMT2AMEN1HSD11B1KDM4E
SCHEMBL16063707 0.94 LMNA (0.42) MAPTKMT2AMEN1KDM4EALDH1A1
SCHEMBL13037415 0.89 STAT3 (0.47) MAPTKMT2AMEN1ALDH1A1XBP1
SCHEMBL14472762 0.88 KMT2A (0.39) MAPTKMT2AMEN1KDM4EALDH1A1
SCHEMBL546361 0.86 TDP1 (0.45) MAPTKMT2AMEN1HSD11B1KDM4E
SCHEMBL546362 0.86 TDP1 (0.45) MAPTKMT2AMEN1HSD11B1KDM4E
SCHEMBL546915 0.85 ALDH1A1 (0.49) MAPTKMT2AMEN1HSD11B1KDM4E
SCHEMBL4900892 0.85 KMT2A (0.42) MAPTKMT2AMEN1HSD11B1KDM4E
SCHEMBL963168 0.85 ALDH1A1 (0.49) MAPTKMT2AMEN1HSD11B1KDM4E
SCHEMBL12737105 0.83 NPC1 (0.42) MAPTKMT2AMEN1ALDH1A1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4050054-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHINETSU CHEMICAL CO (JP) 2025-04-23 EP disclosed
US-20230176479-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-08 US disclosed
EP-4167028-A1 NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-19 EP disclosed
US-20220382157-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-01 US disclosed
US-11460774-B2 Photosensitive resin composition, photosensitive dry film, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-10-04 US disclosed
EP-4050054-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2022-08-31 EP disclosed
US-11256174-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-02-22 US disclosed
EP-3671345-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2022-02-02 EP disclosed
EP-3163374-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-12-02 EP disclosed
US-7569326-B2 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7527912-B2 Photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-05 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
EP-2000851-A1 Photomask blank, resist pattern forming process, and photomask preparation process Shin-Etsu Chemical Co., Ltd. (JP) 2008-12-10 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process MDM4, MUS81, NOP2 MAPT 902/4885KMT2A 2370/4885MEN1 1226/4885
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 MAPT 3800/4885KMT2A 147/4885MEN1 2210/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST MAPT 3968/4885KMT2A 83/4885MEN1 2788/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 MAPT 4712/4885KMT2A 1964/4885MEN1 3960/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.