Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 4/20 | 0.44 |
| ▸ | KIF11 | P52732 | 2/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.42 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | POLB | P06746 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | TRPV6 | Q9H1D0 | 1/20 | 0.40 |
| ▸ | ELOVL6 | Q9H5J4 | 1/20 | 0.39 |
| ▸ | PTGES2 | Q9H7Z7 | 1/20 | 0.39 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.39 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.39 |
| ▸ | EEF2K | O00418 | 1/20 | 0.39 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.38 |
| ▸ | AR | P10275 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL503538 | 0.95 | ALDH1A1 (0.43) | HSD11B1KIF11ALDH1A1TSHRMEN1 | |
| SCHEMBL1804286 | 0.93 | KIF11 (0.47) | KIF11ALDH1A1MEN1KMT2ACYP19A1 | |
| SCHEMBL2904028 | 0.86 | AHR (0.44) | HSD11B1ALDH1A1KMT2AELOVL6AR | |
| SCHEMBL2903881 | 0.86 | CA2 (0.44) | HSD11B1KIF11ALDH1A1MEN1KMT2A | |
| Toliodium SCHEMBL2902858 | 0.85 | ALDH1A1 (0.49) | HSD11B1KIF11ALDH1A1TSHRMEN1 | |
| SCHEMBL503480 | 0.85 | ALDH1A1 (0.44) | HSD11B1KIF11ALDH1A1MEN1POLB | |
| SCHEMBL548081 | 0.85 | ALDH1A1 (0.49) | HSD11B1KIF11ALDH1A1TSHRMEN1 | |
| SCHEMBL1801287 | 0.85 | CNR2 (0.44) | KIF11ALDH1A1POLBELOVL6 | |
| SCHEMBL452774 | 0.83 | ALDH1A1 (0.46) | HSD11B1ALDH1A1KEAP1NFE2L2 | |
| SCHEMBL5403735 | 0.83 | CA1 (0.49) | TSHRMEN1POLBKMT2AAR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 175 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| US-20240369925-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| EP-1343048-A2 | Anthracene derivative and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-09-10 | — | — | EP | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| US-20030113660-A1 | Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
| US-20020192593-A1 | Used as chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure | JSR CORPORATION (JP) | 2002-12-19 | — | — | US | disclosed |
| US-20020172885-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-11-21 | — | — | US | disclosed |
| EP-1253470-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-10-30 | — | — | EP | disclosed |
| EP-1238972-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR Corporation (JP) | 2002-09-11 | — | — | EP | disclosed |
| EP-1231205-A1 | VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2002-08-14 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | HSD11B1 1689/4885KIF11 1073/4885ALDH1A1 1809/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | HSD11B1 2144/4885KIF11 682/4885ALDH1A1 3830/4885 |
| US-20020172885-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | ARID2, RAD1, RAD51 | HSD11B1 3484/4885KIF11 4016/4885ALDH1A1 1654/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | HSD11B1 2424/4885KIF11 3842/4885ALDH1A1 1540/4885 |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | HSD11B1 3894/4885KIF11 4209/4885ALDH1A1 1216/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.