Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MMP2 | P08253 | 2/20 | 0.54 |
| ▸ | CA1 | P00915 | 2/20 | 0.54 |
| ▸ | CA2 | P00918 | 2/20 | 0.54 |
| ▸ | MMP1 | P03956 | 1/20 | 0.54 |
| ▸ | MMP9 | P14780 | 1/20 | 0.54 |
| ▸ | MMP8 | P22894 | 1/20 | 0.54 |
| ▸ | MMP13 | P45452 | 1/20 | 0.54 |
| ▸ | PKM | P14618 | 2/20 | 0.52 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.52 |
| ▸ | MEN1 | O00255 | 1/20 | 0.52 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.52 |
| ▸ | SOS1 | Q07889 | 1/20 | 0.48 |
| ▸ | F2 | P00734 | 1/20 | 0.48 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.48 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.48 |
| ▸ | PRSS3 | P35030 | 1/20 | 0.48 |
| ▸ | PTGS2 | P35354 | 3/20 | 0.45 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.45 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.43 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10191888 | 0.87 | ALDH1A1 (0.54) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL14509444 | 0.87 | ACHE (0.62) | CA1CA2ALDH1A1MEN1KMT2A | |
| SCHEMBL14509400 | 0.85 | CA1 (0.43) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL30859078 | 0.84 | CA1 (0.52) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL2121770 | 0.81 | HSD11B1 (0.55) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL4328574 | 0.81 | HSD11B1 (0.55) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL30072318 | 0.81 | HSD11B1 (0.55) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL79787 | 0.81 | HSD11B1 (0.55) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL1346329 | 0.79 | MMP2 (0.52) | MMP2CA1CA2MMP1MMP9 | |
| SCHEMBL3457995 | 0.79 | MMP2 (0.52) | MMP2CA1CA2MMP1MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-119452307-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2025-02-14 | — | — | CN | disclosed |
| CN-119422108-A | Resist composition and method for forming resist film using same | 三菱瓦斯化学株式会社 | 2025-02-11 | — | — | CN | disclosed |
| US-20240369925-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| CN-117769684-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2024-03-26 | — | — | CN | disclosed |
| CN-117716290-A | Resist composition and method for forming resist film using the same | 三菱瓦斯化学株式会社 | 2024-03-15 | — | — | CN | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-8198007-B2 | Negative-working resist composition and pattern forming method using the same | DAI NIPPON PRINTING CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-7919223-B2 | Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20100266952-A1 | CYCLIC COMPOUND, PHOTORESIST BASE, PHOTORESIST COMPOSITION, MICROFABRICATION PROCESS, AND SEMICONDUCTOR DEVICE | IDEMITSU KOSAN CO., LTD. (JP) | 2010-10-21 | — | — | US | disclosed |
| US-20100239980-A1 | NEGATIVE-WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | DAI NIPPON PRINTING CO., LTD. (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20080113294-A1 | Compound for Resist and Radiation-Sensitive Composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-05-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | PARG, RAD51, SRMS | MMP2 2363/4885CA1 1834/4885CA2 3153/4885 |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | MMP2 3859/4885CA1 1531/4885CA2 4687/4885 |
| US-20100266952-A1 | CYCLIC COMPOUND, PHOTORESIST BASE, PHOTORESIST COMPOSITION, MICROFABRICATION PROCESS, AND SEMICONDUCTOR DEVICE | C1S, CCNL2, CCNT1 | MMP2 4416/4885CA1 2257/4885CA2 2323/4885 |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, RER1, REV1 | MMP2 4290/4885CA1 1807/4885CA2 4834/4885 |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | WEE1, SLC11A2, RAD1 | MMP2 4296/4885CA1 2746/4885CA2 4845/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.