Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Tetrylammonium. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.42 |
| ▸ | NFKB1 | P19838 | 3/20 | 0.42 |
| ▸ | KCNA1 | Q09470 | 1/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.40 |
| ▸ | ATM | Q13315 | 1/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.39 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.39 |
| ▸ | CA1 | P00915 | 2/20 | 0.33 |
| ▸ | BBOX1 | O75936 | 2/20 | 0.32 |
| ▸ | CA2 | P00918 | 2/20 | 0.32 |
| ▸ | FFAR3 | O14843 | 2/20 | 0.32 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.32 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.32 |
| ▸ | HDAC2 | Q92769 | 2/20 | 0.32 |
| ▸ | HDAC8 | Q9BY41 | 2/20 | 0.32 |
| ▸ | CA4 | P22748 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetrylammonium SCHEMBL5573591 | 0.81 | TSHR (0.44) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrapropylammonium SCHEMBL106498 | 0.80 | SLC22A1 (0.48) | TSHRNFKB1CYP3A4NPSR1CA1 | |
| Tetrylammonium SCHEMBL168440 | 0.80 | TSHR (0.57) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL5874494 | 0.79 | TSHR (0.42) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL36648 | 0.79 | TSHR (0.42) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Cadaverine Tartrate SCHEMBL5874349 | 0.79 | TSHR (0.42) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL7981487 | 0.78 | CA4 (0.59) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL36800 | 0.77 | TSHR (0.53) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL18144308 | 0.77 | TSHR (0.53) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL168442 | 0.77 | TSHR (0.53) | TSHRNFKB1KCNA1KDM4EPMP22 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| CN-111458980-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-07-28 | — | — | CN | disclosed |
| US-20200233303-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-23 | — | — | US | disclosed |
| CN-111423587-A | Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern | 信越化学工业株式会社 | 2020-07-17 | — | — | CN | disclosed |
| EP-3680275-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-07-15 | — | — | EP | disclosed |
| US-20200216670-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-09 | — | — | US | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |
| EP-3657254-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-05-27 | — | — | EP | disclosed |
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | TSHR 439/4885NFKB1 4818/4885KCNA1 903/4885 |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | TSHR 4787/4885NFKB1 3130/4885KCNA1 1705/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | TSHR 3217/4885NFKB1 2890/4885KCNA1 860/4885 |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SMC2, F12, SMC1A | TSHR 3510/4885NFKB1 4368/4885KCNA1 3634/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | TSHR 770/4885NFKB1 3949/4885KCNA1 841/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | TSHR 446/4885NFKB1 3704/4885KCNA1 2655/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | TSHR 2745/4885NFKB1 3355/4885KCNA1 2081/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.