SCHEMBL5886704

SCHEMBL5886704

CCN(CC)CC(C)(C)O

nearest known ligand 0.37

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.37
PAX8 Q06710 1/20 0.34
MLYCD O95822 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25276314 0.97 MLYCD (0.36) ALDH1A1PAX8MLYCD
SCHEMBL30412178 0.94 ALDH1A1 (0.37) ALDH1A1PAX8MLYCD
SCHEMBL13683405 0.86 ALDH1A1 (0.32) ALDH1A1MLYCD
SCHEMBL19619702 0.84 ALDH1A1 (0.30) ALDH1A1MLYCD
SCHEMBL1813722 0.83 ALDH1A1 (0.44) ALDH1A1
SCHEMBL25372183 0.82 CYP1A2 (0.42) ALDH1A1
SCHEMBL6557086 0.81 PAX8 (0.34) ALDH1A1PAX8
SCHEMBL22031900 0.80
SCHEMBL25404749 0.78 TSHR (0.32)
SCHEMBL25374305 0.78 TSHR (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240351880-A1 METHOD FOR PREPARING SINGLE-WALLED CARBON NANOTUBES USING SINGEL-ATOM CATALYST, AND SINGLE-WALLED CARBON NANOTUBES PREPARED THEREBY KOREA INSTITUTE OF ENERGY RESEARCH (KR) 2024-10-24 US disclosed
US-10167304-B2 Ruthenium compound, material for thin film formation, and process for thin film formation ADEKA CORPORATION (JP) 2019-01-01 US disclosed
EP-2754638-B1 FILM-FORMING MATERIAL, GROUP IV METAL OXIDE FILM AND VINYLENE DIAMIDE COMPLEX TOSOH CORP (JP) 2018-11-07 EP disclosed
EP-3144293-B1 COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM ADEKA CORP (JP) 2018-09-19 EP disclosed
US-9994593-B2 Copper compound, starting material for forming thin film, and method for manufacturing thin film ADEKA CORPORATION (JP) 2018-06-12 US disclosed
EP-3144313-A1 COBALT COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, AND METHOD FOR PRODUCING THIN FILM Adeka Corporation (JP) 2017-03-22 EP disclosed
EP-3144293-A1 COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM Adeka Corporation (JP) 2017-03-22 EP disclosed
US-20170050998-A1 COBALT COMPOUND, THIN FILM-FORMING RAW MATERIAL, AND METHOD FOR PRODUCING THIN FILM ADEKA CORPORATION (JP) 2017-02-23 US disclosed
US-20170044188-A1 COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM ADEKA CORPORATION (JP) 2017-02-16 US disclosed
US-20160272664-A1 RUTHENIUM COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS FOR THIN FILM FORMATION ADEKA CORPORATION (JP) 2016-09-22 US disclosed
US-9371452-B2 Film-forming material, group IV metal oxide film and vinylenediamide complex TOSOH CORPORATION (JP) 2016-06-21 US disclosed
CN-105001254-A Manufacturing methods for film-forming material, group IV metal oxide film TOSOH CORP 2015-10-28 CN disclosed
US-20140227456-A1 FILM-FORMING MATERIAL, GROUP IV METAL OXIDE FILM AND VINYLENEDIAMIDE COMPLEX SAGAMI CHEMICAL RESEARCH INSTITUTE (JP) 2014-08-14 US disclosed
CN-103917487-A Film-forming material, group IV metal oxide film, and vinylidene diamide complex TOSOH CORP 2014-07-09 CN disclosed
US-7501153-B2 Alkoxide compound, thin film-forming material and method for forming thin film ADEKA CORPORATION (JP) 2009-03-10 US disclosed
US-20080085365-A1 Alkoxide Compound, Thin Film-Forming Material And Method For Forming Thin Film ADEKA CORPORATION (JP) 2008-04-10 US disclosed
EP-1847532-A1 IGF-1R INHIBITOR KYOWA HAKKO KOGYO CO., LTD. (JP) 2007-10-24 EP disclosed
WO-2007048802-A1 (HETERO)ARYL COMPOUNDS WITH MCH ANTAGONISTIC ACTIVITY AND MEDICAMENTS COMPRISING THESE COMPOUNDS BOEHRINGER INGELHEIM INTERNATIONAL GMBH (DE) 2007-05-03 WO disclosed
US-6982341-B1 Volatile copper aminoalkoxide complex and deposition of copper thin film using same KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 2006-01-03 US disclosed
EP-0431468-A1 A poison bait for control for harmful insects SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1991-06-12 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170044188-A1 COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM C5, C9, C1R ALDH1A1 513/4885PAX8 2361/4885MLYCD 2633/4885
US-20160272664-A1 RUTHENIUM COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS FOR THIN FILM FORMATION ADH1A, ADH5, ADH1C ALDH1A1 138/4885PAX8 2590/4885MLYCD 1126/4885
US-10167304-B2 Ruthenium compound, material for thin film formation, and process for thin film formation ADH1A, ADH5, ADH1C ALDH1A1 138/4885PAX8 2590/4885MLYCD 1126/4885
US-20170050998-A1 COBALT COMPOUND, THIN FILM-FORMING RAW MATERIAL, AND METHOD FOR PRODUCING THIN FILM C5, C9, TFRC ALDH1A1 3195/4885PAX8 3253/4885MLYCD 420/4885
US-20080085365-A1 Alkoxide Compound, Thin Film-Forming Material And Method For Forming Thin Film APOB, C9, C5 ALDH1A1 1695/4885PAX8 3262/4885MLYCD 2051/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.