SCHEMBL5950044

SCHEMBL5950044

CC(C)(C)[I+](OS(=O)(=O)C(F)(F)F)(c1ccccc1)C(C)(C)C

nearest known ligand 0.34

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ CA2 P00918 3/20 0.34
▸ CA1 P00915 2/20 0.34
▸ CA5A P35218 1/20 0.34
▸ CA9 Q16790 1/20 0.34
▸ HSD11B1 P28845 3/20 0.34
▸ PDK1 Q15118 2/20 0.33
▸ PDK2 Q15119 2/20 0.33
▸ PDK3 Q15120 2/20 0.33
▸ PDK4 Q16654 2/20 0.33
▸ KEAP1 Q14145 1/20 0.32
▸ HTR6 P50406 1/20 0.31
▸ GPR3 P46089 1/20 0.31
▸ CA12 O43570 1/20 0.30
▸ CA7 P43166 1/20 0.30
▸ CA14 Q9ULX7 1/20 0.30
▸ MAPK1 P28482 1/20 0.30
▸ PTPN11 Q06124 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL379586 0.83 CA1 (0.38) CA2CA1HSD11B1
SCHEMBL1771806 0.82 CA2 (0.40) CA2CA1HSD11B1
SCHEMBL6336252 0.80 KMT2A (0.44) HSD11B1
SCHEMBL1285710 0.79 CA1 (0.35) CA2CA1CA9CA12CA7
SCHEMBL5851781 0.78 CA1 (0.32) CA2CA1CA5ACA9KEAP1
SCHEMBL1419536 0.73 CXCR2 (0.31) —
SCHEMBL1658313 0.71 HSD11B1 (0.35) CA2CA1CA9HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL443422 0.69 GPR3 (0.46) CA2CA1CA5ACA9HSD11B1
SCHEMBL537975 0.67 CA2 (0.33) CA2CA1CA5ACA9HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL8735170 0.67 GPR3 (0.47) CA2CA1CA5ACA9HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7005216-B2 Photo mask RENESAS TECHNOLOGY CORP. (JP) 2006-02-28 — — US disclosed
US-20030129505-A1 Krypton fluoride laser lithography; photoresist pattern RENESAS ELECTRONICS CORPORATION (JP) 2003-07-10 — — US disclosed
US-5882843-A ACRYLIC POLYMER, INITIATOR, SOLVENTS, THERMAL CROSSLINKER AND PIGMENTS HOECHST JAPAN LIMITED (JP) 1999-03-16 — — US disclosed
EP-0713144-B1 Photosensitive resin composition HOECHST JAPAN (JP) 1998-09-23 — — EP disclosed
EP-0713144-A2 Photosensitive resin composition HOECHST JAPAN LIMITED (JP) 1996-05-22 — — EP disclosed
US-5350485-A High-resolution lithography and semiconductor device manufacturing method HITACHI, LTD. (JP) 1994-09-27 — — US disclosed
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