SCHEMBL610271

SCHEMBL610271

[H-].[Na+].[Na+].[Na+].[Na+].[O-]B([O-])[O-]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8168925 1.00
SCHEMBL179712 1.00
SCHEMBL1147998 0.91
SCHEMBL10589186 0.91
SCHEMBL15875 0.91
SCHEMBL3846 0.91
SCHEMBL8971063 0.91
SCHEMBL11599908 0.91
SCHEMBL1568303 0.91
Iodide SCHEMBL25394211 0.83 ALDH1A1 (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4644396-A1 TOLL-LIKE RECEPTOR INHIBITOR, AND PREPARATION THEREFOR AND APPLICATION THEREOF Visionpharma (Nantong) Co., Ltd (CN) 2025-11-05 EP disclosed
CN-114512265-B Dispersion, method for producing structure with conductive pattern using same, and structure with conductive pattern 旭化成株式会社 2024-12-31 CN disclosed
WO-2023190315-A1 HEAT-SENSITIVE RECORDING BODY 日本製紙株式会社 2023-10-05 WO disclosed
CN-115989341-A Method for manufacturing structure with conductive pattern 旭化成株式会社 2023-04-18 CN disclosed
CN-114512265-A Dispersion, method for producing structure with conductive pattern using same, and structure with conductive pattern 旭化成株式会社 2022-05-17 CN disclosed
CN-110366761-B Dispersion, method for producing conductive-patterned structure using same, and conductive-patterned structure 旭化成株式会社 2022-04-29 CN disclosed
WO-2022085461-A1 METHOD FOR MANUFACTURING CONDUCTIVE PATTERN-PROVIDED STRUCTURE 旭化成株式会社 2022-04-28 WO disclosed
EP-1422287-B1 LUBRICATING OIL COMPOSITION FOR AUTOMATIC TRANSMISSION NIPPON OIL CORP (JP) 2016-02-17 EP disclosed
US-20140284306-A1 METHOD FOR MANUFACTURING POROUS STRUCTURE AND METHOD FOR FORMING PATTERN KABUSHIKI KAISHA TOSHIBA (JP) 2014-09-25 US disclosed
US-8778201-B2 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2014-07-15 US disclosed
US-20040175649-A1 Image-formation material and infrared absorber FUJI PHOTO FILM CO., LTD. 2004-09-09 US disclosed
US-20040167041-A1 Lubricating oil compositions for automatic transmissions NIPPON OIL CORPORATION 2004-08-26 US disclosed
EP-1422287-A1 LUBRICATING OIL COMPOSITION FOR AUTOMATIC TRANSMISSION Nippon Oil Corporation (JP) 2004-05-26 EP disclosed
US-6727037-B2 HEAT SENSITIVE ELEMENTS FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-20040050816-A1 Forming pattern using graft polymer containing metal particles; overcoating substrates; removal polymer KABUSHIKI KAISHA TOSHIBA (JP) 2004-03-18 US disclosed
US-20040043334-A1 Method of manufacturing for conductive pattern substrate DAI NIPPON PRINTING CO., LTD. (JP) 2004-03-04 US disclosed
US-20030222048-A1 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2003-12-04 US disclosed
US-6565763-B1 Method for manufacturing porous structure and method for forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2003-05-20 US disclosed
US-20020015911-A1 Image-formation material and infrared absorber FUJIFILM CORPORATION (JP) 2002-02-07 US disclosed
EP-1162078-A2 Image-formation material and infrared absorber FUJI PHOTO FILM CO., LTD. (JP) 2001-12-12 EP disclosed