Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MMP2 | P08253 | 2/20 | 0.47 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.47 |
| ▸ | MAPT | P10636 | 2/20 | 0.45 |
| ▸ | RECQL | P46063 | 1/20 | 0.45 |
| ▸ | PKM | P14618 | 3/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.44 |
| ▸ | HTT | P42858 | 2/20 | 0.44 |
| ▸ | LMNA | P02545 | 2/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.44 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.44 |
| ▸ | POLB | P06746 | 1/20 | 0.43 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.43 |
| ▸ | GAA | P10253 | 1/20 | 0.42 |
| ▸ | SNCA | P37840 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 1/20 | 0.40 |
| ▸ | MMP1 | P03956 | 1/20 | 0.40 |
| ▸ | MMP9 | P14780 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30197568 | 0.85 | ALDH1A1 (0.49) | MMP2CYP2D6MAPTRECQLPKM | |
| SCHEMBL29181221 | 0.84 | MMP2 (0.46) | MMP2CYP2D6MAPTRECQLPKM | |
| SCHEMBL64963 | 0.81 | SMN1; SMN2 (0.61) | MMP2CYP2D6MAPTPKMALDH1A1 | |
| SCHEMBL65073 | 0.81 | PKM (0.51) | MMP2CYP2D6MAPTRECQLPKM | |
| P-Xylene SCHEMBL8660591 | 0.80 | GAA (0.62) | MMP2CYP2D6MAPTPKMALDH1A1 | |
| SCHEMBL1705904 | 0.80 | GAA (0.62) | MMP2CYP2D6MAPTPKMALDH1A1 | |
| SCHEMBL5068661 | 0.80 | GAA (0.62) | MMP2CYP2D6MAPTPKMALDH1A1 | |
| SCHEMBL34 | 0.80 | GAA (0.62) | MMP2CYP2D6MAPTPKMALDH1A1 | |
| SCHEMBL31313 | 0.80 | GAA (0.62) | MMP2CYP2D6MAPTPKMALDH1A1 | |
| SCHEMBL11432043 | 0.80 | GAA (0.62) | MMP2CYP2D6MAPTPKMALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 358 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| CN-119331250-A | Silicon-containing bottom anti-reflection coating composition and preparation method and application thereof | 福建泓光半导体材料有限公司 | 2025-01-21 | — | — | CN | disclosed |
| CN-119264435-A | Organosilicon polymer, silicon-containing bottom anti-reflection coating composition, and preparation methods and applications thereof | 福建泓光半导体材料有限公司 | 2025-01-07 | — | — | CN | disclosed |
| CN-118444530-A | Bottom anti-reflection coating composition, preparation method thereof, and formation method and application of photoresist pattern | 安徽恒坤新材料科技有限公司 | 2024-08-06 | — | — | CN | disclosed |
| CN-118444529-A | Bottom anti-reflection coating composition, preparation method thereof, and formation method and application of photoetching pattern | 安徽恒坤新材料科技有限公司 | 2024-08-06 | — | — | CN | disclosed |
| CN-110637256-B | Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern forming method | 三菱瓦斯化学株式会社 | 2024-01-09 | — | — | CN | disclosed |
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| CN-108693713-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2022-06-03 | — | — | CN | disclosed |
| US-6146806-A | Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same | NEC CORPORATION (JP) | 2000-11-14 | — | — | US | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-6013413-A | Alicyclic nortricyclene polymers and co-polymers | CORNELL RESEARCH FOUNDATION, INC. (US) | 2000-01-11 | — | — | US | disclosed |
| US-5994025-A | MIXTURE OF POLYMER AND ACID GENERATOR | NEC CORPORATION (JP) | 1999-11-30 | — | — | US | disclosed |
| US-5985522-A | PATTERN PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT OF METHACRYLATE POLYMERS | NEC CORPORATION (JP) | 1999-11-16 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5905016-A | Resist pattern forming method and resist material | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1999-05-18 | — | — | US | disclosed |
| US-5770346-A | BRIDGED CYCLIC HYDROCARBON GROUP-CONTAINING ACRYLATE POLYMER | NEC CORPORATION (JP) | 1998-06-23 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | MMP2 1027/4885CYP2D6 3471/4885MAPT 4120/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.