Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10027369 | 0.87 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL304319 | 0.87 | GPX4 (0.33) | ALDH1A1 | |
| SCHEMBL14838639 | 0.84 | ALDH1A1 (0.34) | ALDH1A1 | |
| SCHEMBL22236870 | 0.83 | SMN1; SMN2 (0.31) | — | |
| SCHEMBL10027365 | 0.80 | ALDH1A1 (0.34) | ALDH1A1 | |
| SCHEMBL9924194 | 0.80 | — | — | |
| SCHEMBL9880661 | 0.80 | ALDH1A1 (0.34) | ALDH1A1 | |
| SCHEMBL12156893 | 0.79 | LMNA (0.38) | — | |
| SCHEMBL10027358 | 0.79 | — | — | |
| SCHEMBL10027368 | 0.78 | ALDH1A1 (0.33) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| WO-2023095563-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-06-01 | — | — | WO | disclosed |
| US-20230099348-A1 | PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2023-03-30 | — | — | US | disclosed |
| US-11487203-B2 | Monomers, polymers and photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2022-11-01 | — | — | US | disclosed |
| US-11016388-B2 | Overcoat compositions and methods for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2021-05-25 | — | — | US | disclosed |
| US-10921711-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-02-16 | — | — | US | disclosed |
| US-10564542-B2 | Photoresist compositions and methods | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2020-02-18 | — | — | US | disclosed |
| EP-2492749-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-08-29 | — | — | EP | disclosed |
| EP-2492750-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-08-29 | — | — | EP | disclosed |
| US-20120129108-A1 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-05-24 | — | — | US | disclosed |
| US-20120129108-A1 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-05-24 | — | — | US | disclosed |
| EP-2452932-A2 | Base reactive photoacid generators and photoresists comprising same | Rohm and Haas Electronic Materials LLC (US) | 2012-05-16 | — | — | EP | disclosed |
| US-20120077120-A1 | PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-03-29 | — | — | US | disclosed |
| US-20120077120-A1 | PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-03-29 | — | — | US | disclosed |
| EP-2428842-A1 | Photoresists comprising multi-amide component | Rohm and Haas Electronic Materials LLC (US) | 2012-03-14 | — | — | EP | disclosed |
| US-20100081086-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
| US-20100081086-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11016388-B2 | Overcoat compositions and methods for photolithography | OGT, COLGALT1, PARG | ALDH1A1 2382/4885 |
| US-10564542-B2 | Photoresist compositions and methods | PARG, PNN, PARN | ALDH1A1 4826/4885 |
| US-11487203-B2 | Monomers, polymers and photoresist compositions | MAP1LC3C, LCP1, PIN1 | ALDH1A1 2061/4885 |
| US-20120129108-A1 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ALAD, APEX1, HMBS | ALDH1A1 1611/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.