SCHEMBL6573140

SCHEMBL6573140

CC(C)c1cccc2c(=O)c3ccccc3oc12

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOA P21397 11/20 0.58
KDM4E B2RXH2 4/20 0.58
ALDH1A1 P00352 3/20 0.58
NPC1 O15118 3/20 0.58
RAB9A P51151 2/20 0.58
LMNA P02545 1/20 0.58
GLA P06280 1/20 0.55
CYP3A4 P08684 1/20 0.55
MAPT P10636 1/20 0.55
HPGD P15428 1/20 0.55
PGAM1 P18669 1/20 0.55
CASP1 P29466 1/20 0.55
CASP7 P55210 1/20 0.55
SMN1; SMN2 Q16637 1/20 0.55
HSD17B10 Q99714 1/20 0.55
PTGS2 P35354 1/20 0.51
KDM5A P29375 1/20 0.45
TTR P02766 1/20 0.44
MEN1 O00255 2/20 0.44
KMT2A Q03164 2/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1102400 0.86 ALOX5 (0.42) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL22117292 0.83 MAOA (0.61) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL29521208 0.81 TNKS (0.49) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL3991831 0.81 TNKS (0.49) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL31730219 0.81 MAOA (0.57) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL476564 0.81 MAOA (0.57) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL3135566 0.80 LMNA (0.38) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL8711628 0.77 MAOA (0.64) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL12608741 0.77 MAOA (0.68) MAOAKDM4EALDH1A1NPC1RAB9A
SCHEMBL6932572 0.76 MAOA (0.54) MAOAKDM4EALDH1A1NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3109703-B1 PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME TOKYO ELECTRON LTD (JP) 2020-12-30 EP disclosed
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting TOKYO ELECTRON LIMITED (JP) 2018-07-17 US disclosed
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method JSR CORPORATION (JP) 2018-07-10 US disclosed
US-9971247-B2 Pattern-forming method OSAKA UNIVERSITY (JP) 2018-05-15 US disclosed
US-20170131633-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-05-11 US disclosed
US-20170052449-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052450-A1 PATTERN-FORMING METHOD OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052448-A1 RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
US-20170052449-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-23 US disclosed
EP-3133445-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL OSAKA UNIVERSITY (JP) 2017-02-22 EP disclosed
EP-3133444-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND OSAKA UNIVERSITY (JP) 2017-02-22 EP disclosed
US-20160357103-A1 PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING TOKYO ELECTRON LIMITED (JP) 2016-12-08 US disclosed
EP-0938413-B1 RADIATION-SENSITIVE COMPOSITIONS AND PRINTING PLATES KODAK POLYCHROME GRAPHICS CO (US) 2004-03-03 EP disclosed
EP-0938413-A1 RADIATION-SENSITIVE COMPOSITIONS AND PRINTING PLATES Kodak Polychrome Graphics (US) 1999-09-01 EP disclosed
WO-1998021038-A1 RADIATION-SENSITIVE COMPOSITIONS AND PRINTING PLATES KODAK POLYCHROME GRAPHICS (US) 1998-05-22 WO disclosed
US-4707430-A Optical recording medium OZAWA HIROSHI (JP) 1987-11-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10025187-B2 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting ASIC1, ASIC3, CLTA MAOA 1735/4885KDM4E 3345/4885ALDH1A1 1963/4885
US-10018911-B2 Chemically amplified resist material and resist pattern-forming method SLC11A2, XRCC5, RAD54L MAOA 3208/4885KDM4E 4396/4885ALDH1A1 2183/4885
US-20170052449-A1 CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND RER1, POLR1A, FEM1B MAOA 1117/4885KDM4E 3338/4885ALDH1A1 1044/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.