SCHEMBL668332

SCHEMBL668332

C[N+](C)(C)Cc1ccccc1.O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)[O-])C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.37

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
RECQL P46063 1/20 0.37
ALDH1A1 P00352 5/20 0.37
GAA P10253 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.36
HPGD P15428 1/20 0.36
CYP17A1 P05093 5/20 0.36
CYP19A1 P11511 5/20 0.36
HSD11B1 P28845 2/20 0.35
KDM4E B2RXH2 1/20 0.35
KMT2A Q03164 1/20 0.35
LMNA P02545 1/20 0.34
MGLL Q99685 1/20 0.34
GABBR2 O75899 1/20 0.34
GABRB1 P18505 1/20 0.34
GABRB2 P47870 1/20 0.34
GABBR1 Q9UBS5 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL668333 0.92 ALDH1A1 (0.40) RECQLALDH1A1GAASMN1; SMN2HPGD
SCHEMBL16820467 0.86 MGLL (0.30) MGLL
SCHEMBL16820422 0.86
SCHEMBL15769065 0.85 ALDH1A1 (0.32) ALDH1A1LMNAMGLL
SCHEMBL501575 0.83 KDM4E (0.38) RECQLALDH1A1GAASMN1; SMN2CYP17A1
SCHEMBL18762056 0.81 PRKCA (0.40) ALDH1A1GAASMN1; SMN2CYP17A1CYP19A1
SCHEMBL18762052 0.81 PRKCA (0.40) ALDH1A1GAACYP17A1CYP19A1KDM4E
SCHEMBL668248 0.81 PRKCA (0.40) ALDH1A1GAACYP17A1CYP19A1KDM4E
SCHEMBL18762054 0.81 PRKCA (0.40) ALDH1A1GAACYP17A1CYP19A1KDM4E
SCHEMBL6117737 0.80 KDM4E (0.36) ALDH1A1KDM4EMGLL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11448962-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-09-20 US disclosed
CN-111522198-A Resist composition and pattern forming method 信越化学工业株式会社 2020-08-11 CN disclosed
US-20200249571-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-08-06 US disclosed
US-10078264-B2 Resist composition, patterning process, and barium, cesium and cerium salts SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-09-18 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20160334706-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-17 US disclosed
US-8597869-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-03 US disclosed
US-8535869-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-17 US disclosed
US-20120100486-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-26 US disclosed
US-20120045724-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR RECQL 2526/4885ALDH1A1 4520/4885GAA 1776/4885
US-20200249571-A1 RESIST COMPOSITION AND PATTERNING PROCESS PAG1, LIFR, GIGYF2 RECQL 2714/4885ALDH1A1 1477/4885GAA 1850/4885
US-20120100486-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS STS, SLC6A5, SLC6A9 RECQL 4491/4885ALDH1A1 3978/4885GAA 3046/4885
US-10078264-B2 Resist composition, patterning process, and barium, cesium and cerium salts CASR, LIFR, LBR RECQL 2526/4885ALDH1A1 4520/4885GAA 1776/4885
US-11448962-B2 Resist composition and patterning process PAG1, LIFR, GIGYF2 RECQL 2714/4885ALDH1A1 1477/4885GAA 1850/4885
US-20120045724-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SLC6A5, NES, STS RECQL 4427/4885ALDH1A1 3412/4885GAA 2026/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.