SCHEMBL501575

SCHEMBL501575

O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)[O-])C12CC3CC(CC(C3)C1)C2.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.38
CYP17A1 P05093 4/20 0.37
CYP19A1 P11511 4/20 0.37
GABBR2 O75899 2/20 0.36
GABBR1 Q9UBS5 2/20 0.36
GABRB1 P18505 1/20 0.36
GABRB2 P47870 1/20 0.36
ALDH1A1 P00352 4/20 0.35
GAA P10253 2/20 0.35
MAPT P10636 1/20 0.34
XBP1 P17861 1/20 0.34
RECQL P46063 1/20 0.34
MGLL Q99685 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
CA9 Q16790 2/20 0.33
P2RX4 Q99571 1/20 0.33
P2RX7 Q99572 1/20 0.33
KMT2A Q03164 1/20 0.33
ENPP3 O14638 1/20 0.33
CA2 P00918 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL546659 0.92 MEN1 (0.37) KDM4ECYP17A1CYP19A1GABBR2GABBR1
SCHEMBL1830510 0.90 GAA (0.34) KDM4ECYP17A1CYP19A1GABBR2GABBR1
SCHEMBL18762054 0.85 PRKCA (0.40) KDM4ECYP17A1CYP19A1GABBR2GABBR1
SCHEMBL18762052 0.85 PRKCA (0.40) KDM4ECYP17A1CYP19A1ALDH1A1GAA
SCHEMBL18762056 0.85 PRKCA (0.40) KDM4ECYP17A1CYP19A1ALDH1A1GAA
SCHEMBL668248 0.85 PRKCA (0.40) KDM4ECYP17A1CYP19A1ALDH1A1GAA
SCHEMBL1318815 0.84 L3MBTL1 (0.30)
SCHEMBL668332 0.83 RECQL (0.37) KDM4ECYP17A1CYP19A1GABBR2GABBR1
SCHEMBL953659 0.81 ALDH1A1 (0.45) KDM4ECYP17A1CYP19A1GABBR2GABBR1
SCHEMBL482783 0.79 ALDH1A1 (0.33) ALDH1A1MAPTMGLLSMN1; SMN2KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 150 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250218768-A1 Composition For Forming Silicon-Containing Anti-Reflective Film And Patterning Method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-03 US disclosed
EP-4579345-A2 COMPOSITION FOR FORMING SILICON-CONTAINING ANTI-REFLECTIVE FILM AND PATTERNING METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2025-07-02 EP disclosed
US-20250166999-A1 Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-05-22 US disclosed
EP-4557002-A2 PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-05-21 EP disclosed
US-12174536-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-24 US disclosed
US-20240377730-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-11-14 US disclosed
US-11940728-B2 Molecular resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-03-26 US disclosed
CN-110885282-B Iodonium salt, resist composition and pattern forming method 信越化学工业株式会社 2023-04-18 CN disclosed
US-11448961-B2 Iodonium salt, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-09-20 US disclosed
US-20220155687-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-05-19 US disclosed
EP-2033966-A2 Movel photoacid generators, resist compositons, and patterning processes Shin-Etsu Chemical Co., Ltd. (JP) 2009-03-11 EP disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
EP-2000851-A1 Photomask blank, resist pattern forming process, and photomask preparation process Shin-Etsu Chemical Co., Ltd. (JP) 2008-12-10 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process MDM4, MUS81, NOP2 KDM4E 1401/4885CYP17A1 3585/4885CYP19A1 2481/4885
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 KDM4E 4577/4885CYP17A1 41/4885CYP19A1 101/4885
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 KDM4E 549/4885CYP17A1 4271/4885CYP19A1 2395/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST KDM4E 409/4885CYP17A1 4141/4885CYP19A1 2636/4885
US-11940728-B2 Molecular resist composition and patterning process ETV6, HNRNPR, ETV1 KDM4E 863/4885CYP17A1 4080/4885CYP19A1 4800/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 KDM4E 4073/4885CYP17A1 3054/4885CYP19A1 1972/4885
US-11448961-B2 Iodonium salt, resist composition, and pattern forming process ETV6, ELOVL5, EEF2 KDM4E 832/4885CYP17A1 3070/4885CYP19A1 4229/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.