Known targets — ChEMBL curated mechanism
AGTR1DHFRGABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTNR3C2PBP2XPTGS1PTGS2VKORC1blablaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAftsImrcAmrcBmrdApbp1apbp1bpbp2apbp2bpbp3polthyA
The experimentally established mechanism targets of Potassium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8049491 | 0.92 | — | — | |
| SCHEMBL7445801 | 0.80 | — | — | |
| SCHEMBL2178260 | 0.77 | LMNA (0.42) | — | |
| Butyl Alcohol SCHEMBL7624032 | 0.77 | ALDH1A1 (0.65) | — | |
| Potassium Ion SCHEMBL136478 | 0.77 | — | — | |
| Lithium Ion SCHEMBL5686303 | 0.67 | — | — | |
| SCHEMBL615867 | 0.67 | — | — | |
| 1,4-Butanediol SCHEMBL19462789 | 0.67 | SMN1; SMN2 (0.41) | — | |
| 1,4-Butanediol SCHEMBL18642509 | 0.66 | SMN1; SMN2 (0.58) | — | |
| 1,4-Butanediol SCHEMBL324322 | 0.66 | SMN1; SMN2 (0.58) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4201973-A1 | PREPOLYMER COMPRISING A POLYOXYMETHYLENE BLOCK AND METHOD FOR PRODUCING THE SAME | Covestro Deutschland AG (DE) | 2023-06-28 | — | — | EP | claimed |
| CN-103992255-B | Method for preparing high-purity xanthophylls with calendula officinalis | 云南云药医药研究有限公司 | 2017-01-18 | — | — | CN | claimed |
| CN-103992255-A | Method for preparing high-purity xanthophylls with calendula officinalis | YUNNAN YUNYAO PHARMACEUTICAL RES CO LTD | 2014-08-20 | — | — | CN | claimed |
| US-4090915-A | Forming patterned polycrystalline silicon | RCA CORPORATION (US) | 1978-05-23 | — | — | US | claimed |
| EP-4201973-A1 | PREPOLYMER COMPRISING A POLYOXYMETHYLENE BLOCK AND METHOD FOR PRODUCING THE SAME | Covestro Deutschland AG (DE) | 2023-06-28 | — | — | EP | disclosed |
| CN-107417663-A | A kind of preparation method of high-purity (S) 3 methylamino 1 (base of thiophene 2) propyl alcohol | 台州职业技术学院 | 2017-12-01 | — | — | CN | disclosed |
| CN-103992255-B | Method for preparing high-purity xanthophylls with calendula officinalis | 云南云药医药研究有限公司 | 2017-01-18 | — | — | CN | disclosed |
| CN-103992255-A | Method for preparing high-purity xanthophylls with calendula officinalis | YUNNAN YUNYAO PHARMACEUTICAL RES CO LTD | 2014-08-20 | — | — | CN | disclosed |
| CN-102000356-B | Water-soluble oxidized regenerated cellulose hemostatic material and preparation method thereof | WEIGAO GROUP CO LTD | 2013-04-03 | — | — | CN | disclosed |
| CN-102000356-A | Water-soluble oxidized regenerated cellulose hemostatic material and preparation method thereof | WEIGAO GROUP CO LTD | 2011-04-06 | — | — | CN | disclosed |
| US-6677202-B2 | Power MOS device with increased channel width and process for forming same | FAIRCHILD SEMICONDUCTOR CORPORATION | 2004-01-13 | — | — | US | disclosed |
| US-20010002327-A1 | Power MOS device with increased channel width and process for forming same | HARRIS CORPORATION | 2001-05-31 | — | — | US | disclosed |
| US-4244001-A | Fabrication of an integrated injection logic device with narrow basewidth | RCA CORPORATION (US) | 1981-01-06 | — | — | US | disclosed |
| US-4232327-A | Extended drain self-aligned silicon gate MOSFET | RCA CORPORATION (US) | 1980-11-04 | — | — | US | disclosed |
| US-4231820-A | Method of making a silicon diode array target | RCA CORPORATION (US) | 1980-11-04 | — | — | US | disclosed |
| US-4225875-A | Short channel MOS devices and the method of manufacturing same | RCA CORPORATION (US) | 1980-09-30 | — | — | US | disclosed |
| US-4201603-A | Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon | RCA CORPORATION (US) | 1980-05-06 | — | — | US | disclosed |
| US-4200878-A | Method of fabricating a narrow base-width bipolar device and the product thereof | RCA CORPORATION (US) | 1980-04-29 | — | — | US | disclosed |
| US-4177390-A | A field effect transistor logic gate having depletion mode and enhancement mode transistors | RAYTHEON COMPANY (US) | 1979-12-04 | — | — | US | disclosed |
| US-4090915-A | Forming patterned polycrystalline silicon | RCA CORPORATION (US) | 1978-05-23 | — | — | US | disclosed |