Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.52 |
| ▸ | NPC1 | O15118 | 2/20 | 0.52 |
| ▸ | RAB9A | P51151 | 2/20 | 0.52 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.52 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.51 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.51 |
| ▸ | HPGD | P15428 | 1/20 | 0.51 |
| ▸ | HDAC1 | Q13547 | 5/20 | 0.51 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.51 |
| ▸ | HDAC2 | Q92769 | 2/20 | 0.51 |
| ▸ | CES2 | O00748 | 1/20 | 0.46 |
| ▸ | CES1 | P23141 | 1/20 | 0.46 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.46 |
| ▸ | LMNA | P02545 | 1/20 | 0.43 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.41 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.41 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.41 |
| ▸ | CNR2 | P34972 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL106555 | 0.81 | CES1 (0.47) | SMN1; SMN2ALDH1A1PTPN1KDM4EHPGD | |
| SCHEMBL30161792 | 0.80 | SMN1; SMN2 (0.69) | SMN1; SMN2NPC1RAB9AALDH1A1PTPN1 | |
| SCHEMBL4931148 | 0.80 | SMN1; SMN2 (0.69) | SMN1; SMN2NPC1RAB9AALDH1A1PTPN1 | |
| Bromide SCHEMBL9716135 | 0.80 | CES1 (0.46) | SMN1; SMN2ALDH1A1PTPN1KDM4EHPGD | |
| SCHEMBL12065064 | 0.78 | SMN1; SMN2 (0.67) | SMN1; SMN2NPC1RAB9AALDH1A1PTPN1 | |
| SCHEMBL3922151 | 0.78 | PTPN1 (0.61) | SMN1; SMN2NPC1RAB9AALDH1A1PTPN1 | |
| SCHEMBL12952426 | 0.77 | HDAC1 (0.68) | SMN1; SMN2NPC1RAB9AALDH1A1PTPN1 | |
| SCHEMBL4953757 | 0.77 | HDAC1 (0.68) | SMN1; SMN2NPC1RAB9AALDH1A1PTPN1 | |
| SCHEMBL10182488 | 0.76 | HSD17B3 (0.47) | NPC1RAB9AALDH1A1HDAC1HDAC3 | |
| SCHEMBL3394492 | 0.76 | CES1 (0.49) | SMN1; SMN2ALDH1A1PTPN1KDM4EHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 264 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-20190196328-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2019-06-27 | — | — | US | disclosed |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2019-04-02 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-9880472-B2 | Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same | FUJIFILM CORPORATION (JP) | 2018-01-30 | — | — | US | disclosed |
| US-20180017865-A1 | PATTERN FORMING METHOD, PHOTO MASK MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-01-18 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-02-21 | — | — | US | disclosed |
| US-7304175-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-7205090-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-17 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | SMN1; SMN2 4745/4885NPC1 2838/4885RAB9A 1529/4885 |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | NHERF1, SLC26A3, HCN3 | SMN1; SMN2 3593/4885NPC1 1197/4885RAB9A 1720/4885 |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | ACTR3, RXRA, RARA | SMN1; SMN2 2331/4885NPC1 3368/4885RAB9A 1298/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | SMN1; SMN2 4545/4885NPC1 1262/4885RAB9A 2439/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | SMN1; SMN2 4515/4885NPC1 1660/4885RAB9A 2745/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | SMN1; SMN2 3880/4885NPC1 1664/4885RAB9A 2378/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.