Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 5/20 | 0.53 |
| ▸ | MAPT | P10636 | 4/20 | 0.53 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.53 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.53 |
| ▸ | GSK3B | P49841 | 1/20 | 0.53 |
| ▸ | RAB9A | P51151 | 3/20 | 0.51 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.51 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.51 |
| ▸ | LMNA | P02545 | 1/20 | 0.51 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.51 |
| ▸ | HPGD | P15428 | 2/20 | 0.50 |
| ▸ | ERCC5 | P28715 | 1/20 | 0.50 |
| ▸ | FEN1 | P39748 | 1/20 | 0.50 |
| ▸ | HAO1 | Q9UJM8 | 1/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.49 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.49 |
| ▸ | USP2 | O75604 | 1/20 | 0.49 |
| ▸ | AGTR1 | P30556 | 1/20 | 0.46 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.45 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL685958 | 0.87 | KMT2A (0.48) | SMN1; SMN2MAPTL3MBTL1PTPN1GSK3B | |
| Hydrochloric Acid SCHEMBL4028699 | 0.87 | KMT2A (0.48) | SMN1; SMN2MAPTL3MBTL1PTPN1GSK3B | |
| Bromide SCHEMBL482705 | 0.87 | KMT2A (0.48) | SMN1; SMN2MAPTL3MBTL1PTPN1GSK3B | |
| SCHEMBL715255 | 0.86 | KMT2A (0.44) | SMN1; SMN2MAPTL3MBTL1PTPN1GSK3B | |
| SCHEMBL2754884 | 0.82 | ERCC5 (0.54) | SMN1; SMN2HPGDERCC5FEN1ALDH1A1 | |
| SCHEMBL8737972 | 0.82 | HPGD (0.49) | SMN1; SMN2MAPTL3MBTL1PTPN1GSK3B | |
| SCHEMBL106663 | 0.80 | NPC1 (0.48) | MAPTL3MBTL1PTPN1RAB9ALMNA | |
| SCHEMBL10122612 | 0.79 | GSK3B (0.52) | MAPTL3MBTL1GSK3BRAB9ALMNA | |
| SCHEMBL6117602 | 0.79 | NPC1 (0.50) | SMN1; SMN2MAPTPTPN1RAB9AHPGD | |
| SCHEMBL10122613 | 0.79 | GSK3B (0.52) | SMN1; SMN2MAPTGSK3BRAB9ALMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 264 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9703193-B2 | Onium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-11 | — | — | US | disclosed |
| US-9703193-B2 | Onium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-11 | — | — | US | disclosed |
| US-9645491-B2 | Sulfonium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9645491-B2 | Sulfonium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20080076063-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-03-27 | — | — | US | disclosed |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-02-21 | — | — | US | disclosed |
| US-7304175-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | SMN1; SMN2 4745/4885MAPT 4762/4885L3MBTL1 4447/4885 |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | NHERF1, SLC26A3, HCN3 | SMN1; SMN2 3593/4885MAPT 4124/4885L3MBTL1 4467/4885 |
| US-20080076063-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SLC26A3, HCN3, NHERF1 | SMN1; SMN2 3811/4885MAPT 4446/4885L3MBTL1 4182/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | SMN1; SMN2 4545/4885MAPT 4704/4885L3MBTL1 4862/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | SMN1; SMN2 4515/4885MAPT 4756/4885L3MBTL1 4841/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | SMN1; SMN2 3880/4885MAPT 4784/4885L3MBTL1 4879/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.