Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 2/20 | 0.48 |
| ▸ | RAB9A | P51151 | 2/20 | 0.48 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.48 |
| ▸ | BLM | P54132 | 2/20 | 0.47 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.47 |
| ▸ | ABL1 | P00519 | 1/20 | 0.47 |
| ▸ | POLB | P06746 | 1/20 | 0.47 |
| ▸ | ALPI | P09923 | 1/20 | 0.47 |
| ▸ | GAA | P10253 | 1/20 | 0.47 |
| ▸ | ALPG | P10696 | 1/20 | 0.47 |
| ▸ | APEX1 | P27695 | 1/20 | 0.47 |
| ▸ | CASP3 | P42574 | 1/20 | 0.47 |
| ▸ | RECQL | P46063 | 1/20 | 0.47 |
| ▸ | CASP7 | P55210 | 1/20 | 0.47 |
| ▸ | CASP6 | P55212 | 1/20 | 0.47 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.47 |
| ▸ | RIN1 | Q13671 | 1/20 | 0.47 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.47 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.47 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6117602 | 0.83 | NPC1 (0.50) | NPC1RAB9APTPN1KDM4EALDH1A1 | |
| SCHEMBL10122613 | 0.83 | GSK3B (0.52) | NPC1RAB9AKDM4EALDH1A1LMNA | |
| SCHEMBL686324 | 0.83 | GSK3B (0.50) | NPC1RAB9AALDH1A1GAAL3MBTL1 | |
| SCHEMBL10122612 | 0.83 | GSK3B (0.52) | NPC1RAB9AKDM4EALDH1A1L3MBTL1 | |
| SCHEMBL98167 | 0.82 | KMT2A (0.50) | NPC1RAB9APTPN1KDM4EALDH1A1 | |
| Bromide SCHEMBL2521756 | 0.81 | GSK3B (0.48) | NPC1RAB9AALDH1A1GAAL3MBTL1 | |
| SCHEMBL2184879 | 0.81 | NPC1 (0.48) | NPC1RAB9APTPN1KDM4EMAPT | |
| SCHEMBL686330 | 0.81 | MMP2 (0.38) | NPC1RAB9ABLMKDM4EALDH1A1 | |
| Hydrochloric Acid SCHEMBL4028699 | 0.81 | KMT2A (0.48) | NPC1RAB9APTPN1KDM4EALDH1A1 | |
| SCHEMBL685958 | 0.81 | KMT2A (0.48) | NPC1RAB9APTPN1KDM4EALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 247 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| EP-4024131-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM Corporation (JP) | 2022-07-06 | — | — | EP | disclosed |
| US-11181820-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2021-11-23 | — | — | US | disclosed |
| US-20200319551-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, MASK BLANK WITH RESIST FILM, METHOD FOR PRODUCING PHOTOMASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2020-10-08 | — | — | US | disclosed |
| US-20200192220-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2020-06-18 | — | — | US | disclosed |
| US-10649329-B2 | Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2020-05-12 | — | — | US | disclosed |
| US-20190196328-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2019-06-27 | — | — | US | disclosed |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2019-04-02 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087776-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087789-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-7465528-B2 | Positive-working photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2008-12-16 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-7341817-B2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2008-03-11 | — | — | US | disclosed |
| US-20070224540-A1 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-09-27 | — | — | US | disclosed |
| US-20070087288-A1 | Positive-working photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION | 2007-04-19 | — | — | US | disclosed |
| US-20070082289-A1 | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-04-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | ACTR3, RXRA, RARA | NPC1 3368/4885RAB9A 1298/4885PTPN1 4557/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.