SCHEMBL6932205

SCHEMBL6932205

Cc1ccc(S(=O)(=O)C(=[N+]=[N-])C(=O)c2cccc(Cl)c2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 4/20 0.50
ALDH1A1 P00352 3/20 0.50
ALOX12 P18054 1/20 0.50
TDP1 Q9NUW8 1/20 0.50
NPC1 O15118 1/20 0.46
CASP3 P42574 1/20 0.46
RAB9A P51151 1/20 0.46
SENP8 Q96LD8 1/20 0.46
SENP7 Q9BQF6 1/20 0.46
SENP6 Q9GZR1 1/20 0.46
KMT2A Q03164 3/20 0.43
MEN1 O00255 1/20 0.43
CYP1A2 P05177 1/20 0.43
CYP3A4 P08684 1/20 0.43
GAA P10253 1/20 0.43
CYP2D6 P10635 1/20 0.43
CYP2C9 P11712 1/20 0.43
CYP2C19 P33261 1/20 0.43
C5AR1 P21730 1/20 0.42
FLT1 P17948 2/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9010783 0.88 ALDH1A1 (0.47) MAPTALDH1A1TDP1KMT2AMEN1
SCHEMBL6929196 0.88 PGR (0.44) MAPTALDH1A1NPC1RAB9AKMT2A
SCHEMBL9010806 0.85 KMT2A (0.43) MAPTALDH1A1TDP1KMT2AGAA
SCHEMBL6932211 0.84 CES2 (0.56) MAPTALDH1A1NPC1RAB9AKMT2A
SCHEMBL384364 0.84 CES2 (0.51) MAPTALDH1A1TDP1NPC1RAB9A
SCHEMBL9010847 0.82 CES2 (0.52) ALDH1A1NPC1RAB9AKMT2AMEN1
SCHEMBL9010795 0.82 CES2 (0.48) MAPTALDH1A1KMT2AGAALMNA
SCHEMBL6932210 0.81 PARP1 (0.38) MAPTALDH1A1ALOX12TDP1NPC1
SCHEMBL9010834 0.80 KAT6A (0.49) MAPTALDH1A1KMT2AMEN1LMNA
SCHEMBL384240 0.80 ALDH1A1 (0.50) ALDH1A1ALOX12TDP1NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed
EP-0417556-B1 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AG (DE) 1996-12-11 EP disclosed
EP-0444493-B1 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AG (DE) 1996-11-20 EP disclosed
US-5424166-A Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom HOECHST AKTIENGESELLSCHAFT (DE) 1995-06-13 US disclosed
US-5340682-A Sensitive, heat resistant, noncorrosive HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-23 US disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417556-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed