SCHEMBL6932211

SCHEMBL6932211

Cc1ccc(S(=O)(=O)C(=[N+]=[N-])C(=O)c2ccc(Cl)cc2)cc1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 3/20 0.56
CES1 P23141 3/20 0.56
KMT2A Q03164 3/20 0.51
MAPT P10636 2/20 0.51
HTT P42858 2/20 0.51
SMN1; SMN2 Q16637 1/20 0.48
TP53 P04637 2/20 0.47
ALDH1A1 P00352 3/20 0.43
LMNA P02545 2/20 0.43
KDM4E B2RXH2 1/20 0.43
POLB P06746 1/20 0.43
NOD2 Q9HC29 1/20 0.43
MAOA P21397 1/20 0.42
MAOB P27338 1/20 0.42
MEN1 O00255 1/20 0.42
ENPP3 O14638 1/20 0.41
ENPP1 P22413 1/20 0.41
ENPP2 Q13822 1/20 0.41
NPC1 O15118 1/20 0.41
RAB9A P51151 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9010795 0.93 CES2 (0.48) CES2CES1KMT2AMAPTHTT
SCHEMBL9010901 0.86 KMT2A (0.51) CES2CES1KMT2AMAPTHTT
SCHEMBL384364 0.85 CES2 (0.51) CES2CES1KMT2AMAPTHTT
SCHEMBL8637821 0.85 KMT2A (0.53) CES2CES1KMT2AMAPTHTT
SCHEMBL384366 0.85 CES2 (0.51) CES2CES1KMT2AMAPTHTT
SCHEMBL6932205 0.84 MAPT (0.50) KMT2AMAPTHTTSMN1; SMN2ALDH1A1
SCHEMBL9010786 0.83 ALDH1A1 (0.52) CES2CES1KMT2AMAPTHTT
SCHEMBL9010805 0.82 CYP11B1 (0.43) CES2CES1KMT2AHTTALDH1A1
SCHEMBL7697548 0.81 MMP2 (0.39) CES2CES1KMT2AMAPTHTT
SCHEMBL7722385 0.81 LMNA (0.51) CES2CES1KMT2AMAPTHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-0417556-B1 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AG (DE) 1996-12-11 EP disclosed
EP-0444493-B1 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AG (DE) 1996-11-20 EP disclosed
US-5424166-A Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom HOECHST AKTIENGESELLSCHAFT (DE) 1995-06-13 US disclosed
US-5340682-A Sensitive, heat resistant, noncorrosive HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-23 US disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417556-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed