SCHEMBL702618

SCHEMBL702618

CC(C)C(CCO[SiH3])(c1ccccc1)C(C)C

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.35
CYP2D6 P10635 2/20 0.34
CYP1A2 P05177 1/20 0.34
MAPK1 P28482 1/20 0.33
CHRM2 P08172 2/20 0.33
CHRM1 P11229 2/20 0.33
CHRM3 P20309 2/20 0.33
CYP2C19 P33261 2/20 0.33
ALDH1A1 P00352 2/20 0.33
HSD17B10 Q99714 1/20 0.33
KIF11 P52732 3/20 0.32
HIF1A Q16665 1/20 0.32
EBP Q15125 2/20 0.32
SIGMAR1 Q99720 2/20 0.32
TAAR1 Q96RJ0 1/20 0.31
ALOX15 P16050 1/20 0.31
KDM4E B2RXH2 1/20 0.31
PABPC1 P11940 1/20 0.31
APOBEC3A P31941 1/20 0.31
APOBEC3G Q9HC16 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706262 0.89 RIPK1 (0.33) RIPK1CYP2D6CYP1A2MAPK1CHRM2
SCHEMBL704126 0.81 CYP2D6 (0.36) RIPK1CYP2D6CYP1A2MAPK1CYP2C19
SCHEMBL2369200 0.75 KIF11 (0.45) RIPK1CYP2D6CYP1A2CYP2C19KIF11
SCHEMBL703111 0.74 KIF11 (0.48) CYP2D6MAPK1CHRM2CHRM1CHRM3
SCHEMBL3481611 0.73 CYP2C19 (0.39) CYP2D6CYP1A2MAPK1CHRM2CHRM1
SCHEMBL707648 0.72 MAPK1 (0.39) MAPK1CHRM2CHRM1CHRM3CYP2C19
SCHEMBL706645 0.72 KCNN4 (0.35) CYP2D6CYP1A2MAPK1CHRM2CHRM1
SCHEMBL1313465 0.71 CYP2D6 (0.34) RIPK1CYP2D6CYP1A2MAPK1CHRM2
SCHEMBL1314564 0.71 CYP2D6 (0.34) RIPK1CYP2D6CYP1A2MAPK1CHRM2
SCHEMBL23701252 0.71 TSHR (0.41) CYP1A2MAPK1ALDH1A1KIF11TAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed