SCHEMBL706262

SCHEMBL706262

CC(C)C(CCCO[SiH3])(c1ccccc1)C(C)C

nearest known ligand 0.33

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 1/20 0.33
CYP2D6 P10635 2/20 0.33
CYP1A2 P05177 1/20 0.33
KIF11 P52732 5/20 0.32
SIGMAR1 Q99720 3/20 0.32
MAPK1 P28482 1/20 0.31
CHRM2 P08172 1/20 0.31
CHRM1 P11229 1/20 0.31
CHRM3 P20309 1/20 0.31
KCNH2 Q12809 1/20 0.31
ALDH1A1 P00352 2/20 0.31
CYP2C19 P33261 2/20 0.31
HSD17B10 Q99714 1/20 0.31
EBP Q15125 2/20 0.31
KDM4E B2RXH2 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
HIF1A Q16665 1/20 0.31
PPARA Q07869 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702618 0.89 RIPK1 (0.35) RIPK1CYP2D6CYP1A2KIF11SIGMAR1
SCHEMBL704126 0.78 CYP2D6 (0.36) RIPK1CYP2D6CYP1A2KIF11MAPK1
SCHEMBL705749 0.76 KIF11 (0.55) CYP2D6KIF11SIGMAR1KCNH2CYP2C19
SCHEMBL703821 0.74 MAPK1 (0.36) KIF11SIGMAR1MAPK1KCNH2ALDH1A1
SCHEMBL706328 0.74 SIGMAR1 (0.36) CYP2D6CYP1A2KIF11SIGMAR1MAPK1
SCHEMBL706396 0.72 SCN1A (0.35) CYP2D6CYP1A2KIF11SIGMAR1MAPK1
SCHEMBL702996 0.72 LTA4H (0.37) CYP2D6CYP1A2KIF11SIGMAR1CYP2C19
SCHEMBL2369200 0.72 KIF11 (0.45) RIPK1CYP2D6CYP1A2KIF11KCNH2
SCHEMBL12340194 0.71 LMNA (0.43) CYP2D6CYP1A2ALDH1A1KDM4E
SCHEMBL15159141 0.70 CYP2C19 (0.40) CYP2D6CYP1A2KIF11CHRM3KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed