SCHEMBL704334

SCHEMBL704334

CCCCc1cccc(-c2ccccc2O[SiH3])c1CCCC

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
PTGS2 P35354 4/20 0.41
ALOX5 P09917 1/20 0.41
ELANE P08246 3/20 0.38
CTSG P08311 1/20 0.38
PPARA Q07869 2/20 0.37
LTB4R Q15722 1/20 0.36
LTB4R2 Q9NPC1 1/20 0.36
THRA P10827 1/20 0.36
THRB P10828 1/20 0.36
NR1H2 P55055 1/20 0.35
NR1H3 Q13133 1/20 0.35
PPARG P37231 1/20 0.35
LIPG Q9Y5X9 1/20 0.35
CYP2C9 P11712 2/20 0.35
CYP1A2 P05177 1/20 0.35
CYP19A1 P11511 1/20 0.35
CYP2C19 P33261 1/20 0.35
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707310 0.88 CTSL (0.38) PTGS2ALOX5ELANEPPARALTB4R
SCHEMBL705396 0.87 ALOX5 (0.41) PTGS2ALOX5ELANECTSGPPARA
SCHEMBL18784864 0.85 PTGS2 (0.46) PTGS2ALOX5ELANECTSGPPARA
SCHEMBL8674733 0.83 LIPG (0.41) PTGS2ALOX5ELANECTSGPPARA
SCHEMBL8674994 0.82 LIPG (0.42) PTGS2ALOX5ELANECTSGNR1H2
SCHEMBL448370 0.81 ALOX5 (0.38) PTGS2ALOX5ELANECTSGPPARA
SCHEMBL705035 0.80 THRA (0.46) PTGS2ALOX5PPARATHRATHRB
SCHEMBL448372 0.79 HTR2A (0.42) PTGS2ALOX5ELANECTSGPPARA
SCHEMBL704143 0.78 L3MBTL1 (0.39) CYP2D6
SCHEMBL28067972 0.77 PTGS2 (0.50) PTGS2ALOX5ELANECTSGPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed