SCHEMBL705396

SCHEMBL705396

CCCCc1ccccc1-c1ccccc1O[SiH3]

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 1/20 0.41
PTGS2 P35354 1/20 0.41
THRA P10827 1/20 0.39
THRB P10828 1/20 0.39
NR1H2 P55055 1/20 0.39
NR1H3 Q13133 1/20 0.39
LIPG Q9Y5X9 1/20 0.39
ELANE P08246 1/20 0.38
CTSG P08311 1/20 0.38
CYP2C9 P11712 3/20 0.38
CYP1A2 P05177 2/20 0.38
CYP2C19 P33261 2/20 0.38
CYP19A1 P11511 1/20 0.38
PPARA Q07869 3/20 0.37
CYP3A4 P08684 1/20 0.36
CYP2D6 P10635 1/20 0.36
PPARG P37231 1/20 0.35
CNR1 P21554 1/20 0.35
CNR2 P34972 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704334 0.87 PTGS2 (0.41) ALOX5PTGS2THRATHRBNR1H2
SCHEMBL16933883 0.86 ALOX5 (0.44) ALOX5PTGS2THRATHRBNR1H2
SCHEMBL705035 0.85 THRA (0.46) ALOX5PTGS2THRATHRBLIPG
SCHEMBL27592185 0.84 ALOX5 (0.54) ALOX5PTGS2ELANECTSGPPARA
SCHEMBL2701240 0.83 LIPG (0.50) ALOX5PTGS2NR1H2NR1H3LIPG
SCHEMBL8757163 0.83 ALOX5 (0.41) ALOX5PTGS2THRATHRBNR1H2
SCHEMBL707177 0.82 L3MBTL1 (0.43) CYP2D6
SCHEMBL2112426 0.80 ALOX5 (0.53) ALOX5PTGS2THRATHRBNR1H2
SCHEMBL1980096 0.80 ELANE (0.42) ALOX5PTGS2THRATHRBNR1H2
SCHEMBL16933721 0.79 LIPG (0.50) ALOX5PTGS2THRATHRBNR1H2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed