SCHEMBL706192

SCHEMBL706192

CCCC(O[SiH3])c1cccc(C)c1C

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADRA2A P08913 4/20 0.34
ADRA2B P18089 4/20 0.34
ADRA2C P18825 4/20 0.34
ADRA1A P35348 3/20 0.34
ADRA1B P35368 3/20 0.34
ADRA1D P25100 2/20 0.34
KCNH2 Q12809 1/20 0.34
TP53 P04637 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
CYP2C9 P11712 1/20 0.34
TSHR P16473 1/20 0.34
CYP2C19 P33261 1/20 0.34
SLC6A2 P23975 2/20 0.33
HTR7 P34969 1/20 0.33
ESR1 P03372 1/20 0.33
MAPK1 P28482 1/20 0.33
TRPA1 O75762 1/20 0.31
ATM Q13315 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704366 0.87 ADRA2A (0.37) ADRA2AADRA2BADRA2CADRA1AADRA1B
SCHEMBL703010 0.86 ESR1 (0.44) ADRA2AADRA2BADRA2CADRA1AKCNH2
SCHEMBL11002882 0.79 MAPK1 (0.33) ADRA2AADRA2BADRA2CADRA1AADRA1B
SCHEMBL10822146 0.76 FFAR1 (0.41) ADRA2AADRA2BADRA2CADRA1AADRA1B
SCHEMBL707196 0.75 GABRA1 (0.36) CYP1A2CYP3A4TSHRSLC6A2
SCHEMBL706263 0.75 GABRA1 (0.35) CYP1A2CYP3A4TSHRSLC6A2MAPK1
SCHEMBL27472158 0.74 ADRA2A (0.41) ADRA2AADRA2BADRA2CADRA1AADRA1B
SCHEMBL705169 0.74 ESR1 (0.47) ADRA2AADRA2BADRA2CADRA1AKCNH2
SCHEMBL702730 0.74 TAS1R3 (0.36) ADRA2AADRA2BADRA2CKCNH2CYP3A4
SCHEMBL706329 0.73 GABRA1 (0.33) KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed