SCHEMBL703010

SCHEMBL703010

CCCC(O[SiH3])c1ccccc1C

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.44
SLC6A2 P23975 5/20 0.38
SLC6A4 P31645 5/20 0.38
CYP2D6 P10635 4/20 0.34
SLC6A3 Q01959 4/20 0.34
ADRA2B P18089 3/20 0.34
CYP3A4 P08684 3/20 0.34
ADRA2A P08913 2/20 0.34
CHRM1 P11229 2/20 0.34
HTR2A P28223 2/20 0.34
HTR2C P28335 2/20 0.34
HRH1 P35367 2/20 0.34
OPRM1 P35372 2/20 0.34
DRD3 P35462 2/20 0.34
HTR2B P41595 2/20 0.34
KCNH2 Q12809 2/20 0.34
SLC22A2 O15244 1/20 0.34
SLC22A1 O15245 1/20 0.34
GRIN2D O15399 1/20 0.34
GRIN3B O60391 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706192 0.86 ADRA2A (0.34) ESR1SLC6A2SLC6A4CYP2D6ADRA2B
SCHEMBL21175618 0.85 ESR1 (0.52) ESR1SLC6A2SLC6A4CYP2D6SLC6A3
SCHEMBL705169 0.85 ESR1 (0.47) ESR1SLC6A2SLC6A4CYP2D6SLC6A3
SCHEMBL707196 0.81 GABRA1 (0.36) SLC6A2CYP3A4HTR2CHTR2BLMNA
SCHEMBL702730 0.80 TAS1R3 (0.36) SLC6A2SLC6A4CYP2D6SLC6A3ADRA2B
SCHEMBL27834051 0.79 SLC6A4 (0.43) ESR1SLC6A2SLC6A4CYP2D6SLC6A3
SCHEMBL707595 0.77 TSHR (0.33) SLC6A4CYP2D6CYP3A4CYP2C19CYP2C9
SCHEMBL706089 0.76 CYSLTR2 (0.43) CYP2D6ADRA2BCYP3A4ADRA2ACYP2C9
SCHEMBL705168 0.75 AOC3 (0.42) SLC6A2SLC6A4CYP2D6SLC6A3ADRA2B
SCHEMBL9330275 0.74 CYP19A1 (0.49) ESR1SLC6A2SLC6A4CYP2D6SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed