SCHEMBL706535

SCHEMBL706535

c1ccc(O[Si](c2ccccc2)(c2ccccc2)c2ccc([Si](Oc3ccccc3)(c3ccccc3)c3ccccc3)cc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 3/20 0.41
TSHR P16473 1/20 0.41
CA4 P22748 1/20 0.38
KCNA3 P22001 1/20 0.35
ESR1 P03372 1/20 0.34
ESR2 Q92731 1/20 0.34
CA5A P35218 1/20 0.33
CA5B Q9Y2D0 1/20 0.33
KCNH2 Q12809 1/20 0.32
KDM4E B2RXH2 1/20 0.32
GLA P06280 1/20 0.32
MAPT P10636 1/20 0.32
KMT2A Q03164 1/20 0.32
NR1H2 P55055 1/20 0.32
BAX Q07812 1/20 0.32
MAOA P21397 1/20 0.32
TAAR1 Q96RJ0 1/20 0.31
ALDH1A1 P00352 1/20 0.31
RECQL P46063 1/20 0.31
CA1 P00915 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705575 0.97 LTA4H (0.43) LTA4HTSHRCA4KCNA3ESR1
SCHEMBL3869832 0.86 ACHE (0.42) LTA4HTSHRCA4KMT2AALDH1A1
SCHEMBL198042 0.81 TSHR (0.42) TSHRKDM4EGLAKMT2AMAOA
SCHEMBL28444685 0.81 MAOA (0.52) TSHRKDM4EMAPTKMT2AMAOA
SCHEMBL3871938 0.81 LMNA (0.42) TSHRMAPTKMT2AALDH1A1
SCHEMBL704591 0.79 LTA4H (0.41) LTA4HTSHRCA4KCNA3ESR1
SCHEMBL978832 0.78 LTA4H (0.45) LTA4HTSHRCA4KCNA3ESR1
SCHEMBL7695708 0.77 LTA4H (0.35) LTA4HTSHRCA4KCNA3KDM4E
SCHEMBL7136137 0.77 ALDH1A1 (0.48) TSHRALDH1A1CA1CA2
SCHEMBL431218 0.76 LTA4H (0.43) LTA4HTSHRCA4KCNA3CA5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed