Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.44 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | HPGD | P15428 | 2/20 | 0.40 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.40 |
| ▸ | ELANE | P08246 | 1/20 | 0.40 |
| ▸ | SRC | P12931 | 1/20 | 0.40 |
| ▸ | LMNA | P02545 | 4/20 | 0.39 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.39 |
| ▸ | MTNR1A | P48039 | 1/20 | 0.38 |
| ▸ | MTNR1B | P49286 | 1/20 | 0.38 |
| ▸ | CES2 | O00748 | 1/20 | 0.38 |
| ▸ | CES1 | P23141 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.36 |
| ▸ | ESR1 | P03372 | 1/20 | 0.36 |
| ▸ | ITGB3 | P05106 | 1/20 | 0.36 |
| ▸ | ITGA2B | P08514 | 1/20 | 0.36 |
| ▸ | HMGB1 | P09429 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6271115 | 0.82 | HPGD (0.43) | ALDH1A1CYP3A4KMT2AHPGDCYP2D6 | |
| SCHEMBL10890693 | 0.76 | THRB (0.40) | KMT2AHPGDCYP2D6SRCLMNA | |
| SCHEMBL9245059 | 0.74 | KCNN4 (0.50) | KMT2ACYP2D6SRCLMNAMAPK1 | |
| SCHEMBL27660686 | 0.73 | MTNR1A (0.43) | ALDH1A1CYP3A4KMT2AHPGDCYP2D6 | |
| SCHEMBL704150 | 0.72 | KMT2A (0.40) | ALDH1A1KMT2ALMNATDP1L3MBTL1 | |
| SCHEMBL433140 | 0.71 | DPP4 (0.39) | KMT2ACYP2D6SRCLMNAMAPK1 | |
| SCHEMBL1202828 | 0.68 | ALDH1A1 (0.58) | ALDH1A1CYP3A4KMT2AHPGDCYP2D6 | |
| SCHEMBL12199933 | 0.68 | CYP3A4 (0.58) | ALDH1A1CYP3A4KMT2AHPGDCYP2D6 | |
| SCHEMBL486678 | 0.68 | ALDH1A1 (0.63) | ALDH1A1CYP3A4KMT2AHPGDCYP2D6 | |
| SCHEMBL49492 | 0.68 | ALDH1A1 (0.42) | ALDH1A1CYP3A4HPGDELANELMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4715465-A1 | MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER | Nissan Chemical Corporation (JP) | 2026-03-25 | — | — | EP | disclosed |
| US-12585188-B2 | Composition for forming resist underlying film | NISSAN CHEMICAL CORPORATION (JP) | 2026-03-24 | — | — | US | disclosed |
| EP-4679175-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | Nissan Chemical Corporation (JP) | 2026-01-14 | — | — | EP | disclosed |
| US-20250377596-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-12-11 | — | — | US | disclosed |
| US-20250362609-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID | NISSAN CHEMICAL CORPORATION (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250355357-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-11-20 | — | — | US | disclosed |
| US-20250348001-A1 | METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | NISSAN CHEMICAL CORPORATION (JP) | 2025-11-13 | — | — | US | disclosed |
| US-12339586-B2 | Photocurable resin composition containing self-crosslinkable polymer | NISSAN CHEMICAL CORPORATION (JP) | 2025-06-24 | — | — | US | disclosed |
| US-20250172869-A1 | WAFER END PROTECTIVE-FILM FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING | NISSAN CHEMICAL CORPORATION (JP) | 2025-05-29 | — | — | US | disclosed |
| WO-2022210944-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210960-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210901-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210954-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022114134-A1 | COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION | 日産化学株式会社 | 2022-06-02 | — | — | WO | disclosed |
| WO-2022114132-A1 | SILICON-CONTAINING RESIST UNDERLYAER FILM FORMING COMPOSITION | 日産化学株式会社 | 2022-06-02 | — | — | WO | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | SRSF1, MACF1, SRPK1 | ALDH1A1 3642/4885CYP3A4 3121/4885KMT2A 111/4885 |
| US-12585188-B2 | Composition for forming resist underlying film | SRR, SMC1A, ASH2L | ALDH1A1 1320/4885CYP3A4 3111/4885KMT2A 1145/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.