Biphenyl

Biphenyl

SCHEMBL710434

CC(C)Cc1ccc(OS(=O)(=O)C(F)(F)F)cc1.S.c1ccc(-c2ccccc2)cc1

nearest known ligand 0.44

Full drug profile on Sugi Atlas →

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CXCR2 P25025 2/20 0.42
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
CA9 Q16790 1/20 0.41
PPARG P37231 10/20 0.41
PPARA Q07869 8/20 0.41
CXCR1 P25024 1/20 0.41
PPARD Q03181 1/20 0.39
ALDH1A1 P00352 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Biphenyl SCHEMBL113983 0.99 CXCR2 (0.43) CXCR2CA1CA2CA9PPARG
Biphenyl SCHEMBL4511310 0.97 CXCR2 (0.42) CXCR2CA1CA2CA9PPARG
Hydrogen Sulfide SCHEMBL27492503 0.93 CXCR2 (0.47) CXCR2CXCR1ALDH1A1
SCHEMBL4535172 0.91 CXCR2 (0.48) CXCR2CXCR1ALDH1A1
SCHEMBL24360466 0.79 CA2 (0.62) CXCR2CA1CA2CA9CXCR1
SCHEMBL5532552 0.79 CA2 (0.62) CXCR2CA1CA2CA9CXCR1
Biphenyl SCHEMBL713552 0.79 BACE1 (0.51) CXCR2CA1CA2CA9PPARG
Biphenyl SCHEMBL709602 0.79 CA2 (0.49) CXCR2CA1CA2CA9PPARG
SCHEMBL8687304 0.78 CXCR2 (0.45) CXCR2CA2PPARGPPARACXCR1
SCHEMBL8687306 0.78 CXCR2 (0.45) CXCR2CA2PPARGPPARACXCR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7994050-B2 Method for forming dual damascene pattern HYNIX SEMICONDUCTOR INC. (KR) 2011-08-09 US claimed
US-20100311239-A1 Method for forming dual damascene pattern LEE KI LYOUNG 2010-12-09 US claimed
US-7811929-B2 Method for forming dual damascene pattern HYNIX SEMICONDUCTOR, INC. (KR) 2010-10-12 US claimed
US-7449538-B2 Hard mask composition and method for manufacturing semiconductor device HYNIX SEMICONDUCTOR INC. (KR) 2008-11-11 US claimed
US-20080268641-A1 Method for forming dual damascene pattern HYNIX SEMICONDUCTOR INC. 2008-10-30 US claimed
US-20070154838-A1 Hard Mask Composition and Method for Manufacturing Semiconductor Device HYNIX SEMICONDUCTOR INC. (KR) 2007-07-05 US claimed
CN-117866135-B Self-crosslinking polymer and bottom anti-reflection coating composition as well as preparation method and application thereof 厦门恒坤新材料科技股份有限公司 2025-01-24 CN disclosed
CN-118930721-A Bottom anti-reflection film resin and composition, preparation method and pattern forming method thereof 厦门恒坤新材料科技股份有限公司 2024-11-12 CN disclosed
CN-118818901-A KrF negative photoresist and preparation method and patterning forming method thereof 厦门恒坤新材料科技股份有限公司 2024-10-22 CN disclosed
CN-116082914-B Organic anti-reflection coating composition, preparation method thereof and pattern forming method 厦门恒坤新材料科技股份有限公司 2024-04-30 CN disclosed
CN-117866135-A Self-crosslinking polymer and bottom anti-reflection coating composition as well as preparation method and application thereof 厦门恒坤新材料科技股份有限公司 2024-04-12 CN disclosed
CN-115948095-B Anti-reflection coating composition, preparation method thereof and photoresist pattern forming method 厦门恒坤新材料科技股份有限公司 2023-09-12 CN disclosed
CN-116478328-A Silicon-containing polymer and bottom anti-reflection coating composition and preparation method thereof 厦门恒坤新材料科技股份有限公司 2023-07-25 CN disclosed
US-20090023093-A1 ACID-AMPLIFIER HAVING ACETAL GROUP AND PHOTORESIST COMPOSITION INCLUDING THE SAME DONGJIN SEMICHEM CO., LTD. (KR) 2009-01-22 US disclosed
EP-2017274-A1 Acid-amplifier having acetal group and photoresist composition including the same DONGJIN SEMICHEM CO., LTD (KR) 2009-01-21 EP disclosed
US-20080305430-A1 PHOTO-SENSITIVE COMPOUND AND PHOTORESIST COMPOSITION INCLUDING THE SAME DONGJIN SEMICHEM CO., LTD. (KR) 2008-12-11 US disclosed
EP-2000853-A2 Photo-sensitive compound and photoresist composition including the same DONGJIN SEMICHEM CO., LTD (KR) 2008-12-10 EP disclosed
US-7449538-B2 Hard mask composition and method for manufacturing semiconductor device HYNIX SEMICONDUCTOR INC. (KR) 2008-11-11 US disclosed
US-20080268641-A1 Method for forming dual damascene pattern HYNIX SEMICONDUCTOR INC. 2008-10-30 US disclosed
US-20070154838-A1 Hard Mask Composition and Method for Manufacturing Semiconductor Device HYNIX SEMICONDUCTOR INC. (KR) 2007-07-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080305430-A1 PHOTO-SENSITIVE COMPOUND AND PHOTORESIST COMPOSITION INCLUDING THE SAME CRY1, CRY2, CYP1A1 CXCR2 1683/4885CA1 3359/4885CA2 3966/4885
US-20090023093-A1 ACID-AMPLIFIER HAVING ACETAL GROUP AND PHOTORESIST COMPOSITION INCLUDING THE SAME ASIC1, RARB, RARA CXCR2 1879/4885CA1 295/4885CA2 991/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.