Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | PDE4D | Q08499 | 9/20 | 0.32 |
| ▸ | PDE4A | P27815 | 4/20 | 0.32 |
| ▸ | PDE4B | Q07343 | 4/20 | 0.32 |
| ▸ | PDE4C | Q08493 | 4/20 | 0.32 |
| ▸ | CTSL | P07711 | 1/20 | 0.32 |
| ▸ | MAPK8 | P45983 | 1/20 | 0.32 |
| ▸ | MAPK9 | P45984 | 1/20 | 0.32 |
| ▸ | GPR119 | Q8TDV5 | 1/20 | 0.31 |
| ▸ | ACACB | O00763 | 2/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20972875 | 0.89 | ALDH1A1 (0.39) | ALDH1A1ACACB | |
| SCHEMBL27769437 | 0.85 | PDE4D (0.33) | PDE4DPDE4APDE4BPDE4CCTSL | |
| SCHEMBL4855700 | 0.84 | ALDH1A1 (0.46) | ALDH1A1 | |
| SCHEMBL3368976 | 0.84 | ALDH1A1 (0.40) | ALDH1A1 | |
| SCHEMBL3370071 | 0.81 | ALDH1A1 (0.43) | ALDH1A1 | |
| SCHEMBL8224670 | 0.80 | — | — | |
| SCHEMBL836642 | 0.80 | — | — | |
| SCHEMBL2603677 | 0.80 | — | — | |
| SCHEMBL18644357 | 0.79 | CTSL (0.33) | PDE4DPDE4APDE4BPDE4CCTSL | |
| SCHEMBL372980 | 0.78 | ALDH1A1 (0.46) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 522 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20230174471-A1 | ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME | INHA INDUSTRY PARTNERSHIP INSTITUTE (KR) | 2023-06-08 | — | — | US | disclosed |
| US-20230174471-A1 | ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME | INHA INDUSTRY PARTNERSHIP INSTITUTE (KR) | 2023-06-08 | — | — | US | disclosed |
| US-20230106095-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN | JSR CORPORATION (JP) | 2023-04-06 | — | — | US | disclosed |
| US-20210318616-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2021-10-14 | — | — | US | disclosed |
| US-10719014-B2 | Photoresists comprising amide component | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-07-21 | — | — | US | disclosed |
| US-10719014-B2 | Photoresists comprising amide component | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-07-21 | — | — | US | disclosed |
| US-10509314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-12-17 | — | — | US | disclosed |
| US-10222696-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-05 | — | — | US | disclosed |
| US-10191373-B2 | Method for producing polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-29 | — | — | US | disclosed |
| US-20070185226-A1 | NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070185226-A1 | NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-09 | — | — | US | disclosed |
| US-7232641-B2 | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-19 | — | — | US | disclosed |
| US-7232641-B2 | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-19 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10719014-B2 | Photoresists comprising amide component | ASPH, ALAD, SUN2 | ALDH1A1 823/4885PDE4D 4702/4885PDE4A 4626/4885 |
| US-20230174471-A1 | ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME | PARP10, ADCY10, APRT | ALDH1A1 83/4885PDE4D 3835/4885PDE4A 3252/4885 |
| US-10509314-B2 | Resist composition and patterning process | SRMS, SLC11A2, PCNA | ALDH1A1 4490/4885PDE4D 4434/4885PDE4A 4374/4885 |
| US-10222696-B2 | Resist composition and patterning process | SLC11A2, GRN, PGF | ALDH1A1 4832/4885PDE4D 1382/4885PDE4A 2019/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.