SCHEMBL759916

SCHEMBL759916

Cc1cc(C(C)(C)c2ccc(O)c(O)c2O)cc(C)c1O

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 7/20 0.48
ALOX15 P16050 4/20 0.41
ALOX12 P18054 2/20 0.41
ESR2 Q92731 4/20 0.39
CYP2C9 P11712 2/20 0.38
CYP1A2 P05177 1/20 0.38
CYP2C19 P33261 1/20 0.38
CA2 P00918 2/20 0.38
CA1 P00915 1/20 0.38
AR P10275 2/20 0.37
ALDH1A1 P00352 4/20 0.36
HSD17B10 Q99714 3/20 0.36
TDP1 Q9NUW8 3/20 0.36
HPGD P15428 2/20 0.36
CYP3A4 P08684 1/20 0.36
TSHR P16473 1/20 0.36
CASP1 P29466 1/20 0.36
RECQL P46063 1/20 0.36
HIF1A Q16665 1/20 0.36
LMNA P02545 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29375562 1.00 ESR1 (0.48) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL6751257 0.84 ESR1 (0.46) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL29370295 0.81 ALDH1A1 (0.39) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL36382 0.81 ALDH1A1 (0.39) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL8987443 0.81 ESR1 (0.50) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL675822 0.79 ESR1 (0.62) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL2673681 0.79 RNASEH1 (0.42) ESR1ALOX15ALOX12CYP2C9CYP1A2
SCHEMBL759290 0.78 ESR1 (0.58) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL29375143 0.78 ESR1 (0.58) ESR1ALOX15ALOX12ESR2CYP2C9
SCHEMBL2754945 0.78 ESR1 (0.43) ESR1ALOX15ALOX12ESR2CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3961676-B1 ETCHING METHOD AND PHOTOSENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2025-01-22 EP disclosed
CN-117939914-A Structure, display element, pattern for partition wall, and method for forming the same 东京应化工业株式会社 2024-04-26 CN disclosed
CN-111205648-B Curable composition, cured product, microlens, and optical element 东京应化工业株式会社 2023-12-08 CN disclosed
CN-111324013-B Chemically amplified positive photosensitive resin composition and application thereof 奇美实业股份有限公司 2023-12-01 CN disclosed
CN-117106358-A Composition for forming separation layer, support substrate with separation layer, laminate, method for producing laminate, and method for producing electronic component 东京应化工业株式会社 2023-11-24 CN disclosed
CN-111381438-B Chemically amplified positive photosensitive resin composition and application thereof 奇美实业股份有限公司 2023-06-20 CN disclosed
CN-116262863-A Composition for forming separation layer, support substrate with separation layer, laminate, method for producing laminate, and method for producing electronic component 东京应化工业株式会社 2023-06-16 CN disclosed
EP-3896522-B1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
CN-109062007-B Positive photosensitive polysiloxane composition and application thereof 奇美实业股份有限公司 2023-03-10 CN disclosed
CN-106933034-B Positive photoresist composition 东京应化工业株式会社 2023-01-06 CN disclosed
US-7132213-B2 Positive photoresist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2006-11-07 US disclosed
US-20060210914-A1 Positive photoresist composition and method of forming resist pattern TOKYO OHKA KOGYO., LTD. (JP) 2006-09-21 US disclosed
US-20060166131-A1 Positive photoresist composition and method of forming resist pattern TOKYO OHKA KOGYO, CO., LTD. (JP) 2006-07-27 US disclosed
US-7060410-B2 Novolak resin solution, positive photoresist composition and preparation method thereof TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-13 US disclosed
EP-1644426-A1 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-12 EP disclosed
EP-1644427-A2 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-12 EP disclosed
WO-2005007718-A1 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-27 WO disclosed
WO-2005007719-A2 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-27 WO disclosed
US-20040081909-A1 Novolak resin solution, positive photoresist composition and preparation method thereof TOKYO OHKA KOGYO CO., LTD. (JP) 2004-04-29 US disclosed
US-6265129-B1 FORM A RESIST PATTERN THAT HAD A MICRO-GROOVE IN EACH ELEMENT AND WHICH YET WAS SATISFACTORY IN FEATURE PROFILE AND RESOLUTION. TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-24 US disclosed