Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 10/20 | 0.42 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.37 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.37 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.37 |
| ▸ | MEN1 | O00255 | 2/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.35 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | MDM2 | Q00987 | 1/20 | 0.34 |
| ▸ | POLB | P06746 | 1/20 | 0.34 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
| ▸ | CES1 | P23141 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | CASP3 | P42574 | 1/20 | 0.32 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.32 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.32 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18786010 | 1.00 | ALDH1A1 (0.42) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL18786015 | 1.00 | ALDH1A1 (0.42) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL18786011 | 1.00 | ALDH1A1 (0.42) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL18786012 | 1.00 | ALDH1A1 (0.42) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL18786008 | 1.00 | ALDH1A1 (0.42) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL18786009 | 1.00 | ALDH1A1 (0.42) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL3455098 | 0.98 | ALDH1A1 (0.41) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL12016473 | 0.98 | ALDH1A1 (0.40) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL18785899 | 0.95 | ALDH1A1 (0.36) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL18785904 | 0.91 | L3MBTL1 (0.34) | ALDH1A1MEN1KMT2ATSHRPOLB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 180 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100367-A1 | RESIST MATERIAL AND PATTERN FORMATION METHOD | 東京応化工業株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-11914291-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11835859-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-20230384679-A1 | PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11829067-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-20230375924-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-11822245-B2 | Resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-20230359119-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-09 | — | — | US | disclosed |
| US-8021822-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-20 | — | — | US | disclosed |
| US-8017302-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-13 | — | — | US | disclosed |
| US-7993811-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-09 | — | — | US | disclosed |
| US-20100304303-A1 | Novel Sulfonic Acid Salt and Derivative Thereof, Photoacid Generator Agent, and Resist Material and Pattern Formation Method Using the Photoacid Generator Agent | CENTRAL GLASS COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2009-09-17 | — | — | US | disclosed |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2009-09-17 | — | — | US | disclosed |
| US-20090186297-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186298-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186296-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| EP-2081084-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | INSR, INSRR, SLC6A5 | ALDH1A1 4867/4885ADRB2 1115/4885ADRB1 1595/4885 |
| US-20090234155-A1 | Acid generating agent for chemically amplified resist compositions | POLM, CBR1, PFAS | ALDH1A1 346/4885ADRB2 2425/4885ADRB1 1667/4885 |
| US-20100304303-A1 | Novel Sulfonic Acid Salt and Derivative Thereof, Photoacid Generator Agent, and Resist Material and Pattern Formation Method Using the Photoacid Generator Agent | ARF1, ARF5, ARF6 | ALDH1A1 1757/4885ADRB2 4454/4885ADRB1 4322/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.