SCHEMBL786680

SCHEMBL786680

O=C1C2CC3CC1CC(OC(=O)C(F)(C(F)(F)C(F)(F)F)S(=O)(=O)O)(C3)C2

nearest known ligand 0.46

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.46
NPSR1 Q6W5P4 1/20 0.46
EPHX2 P34913 1/20 0.35
CYP17A1 P05093 1/20 0.32
CYP19A1 P11511 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL786684 0.92 TSHR (0.48) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL13225520 0.88 CYP19A1 (0.36) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL19261603 0.87 TSHR (0.52) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL547287 0.87 TSHR (0.52) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL786499 0.85 TSHR (0.48) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL4410081 0.84 CYP17A1 (0.30) CYP17A1CYP19A1
SCHEMBL10150821 0.80 TSHR (0.51) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL2605894 0.80 TSHR (0.50) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL21249345 0.80 TSHR (0.50) TSHRNPSR1EPHX2CYP17A1CYP19A1
SCHEMBL12369759 0.80 TSHR (0.42) TSHRNPSR1CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8318403-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-11-27 US disclosed
US-8304164-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-11-06 US disclosed
US-8298746-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-30 US disclosed
US-20120258403-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-11 US disclosed
US-8278023-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-02 US disclosed
US-8232039-B2 Polymer and resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-31 US disclosed
US-20120122032-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-17 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8158329-B2 Compound and chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-17 US disclosed
US-20120070778-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-22 US disclosed
US-7572570-B2 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-11 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080274426-A1 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-06 US disclosed
US-20080248423-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-09 US disclosed
US-20080220369-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-11 US disclosed
US-20080213695-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-04 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080176168-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-24 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080081293-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-04-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120258403-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME CLIC4, CLIC1, SLC26A3 TSHR 2127/4885NPSR1 1301/4885EPHX2 3692/4885
US-20080081293-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same HCN3, HCN1, NHERF1 TSHR 618/4885NPSR1 806/4885EPHX2 1108/4885
US-20120122032-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME RER1, RCOR1, PNISR TSHR 516/4885NPSR1 13/4885EPHX2 3919/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.