SCHEMBL547287

SCHEMBL547287

O=C1C2CC3CC1CC(OC(=O)C(F)(F)S(=O)(=O)O)(C3)C2

nearest known ligand 0.52

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.52
NPSR1 Q6W5P4 1/20 0.52
EPHX2 P34913 2/20 0.40
CYP19A1 P11511 2/20 0.35
CYP17A1 P05093 1/20 0.35
CA2 P00918 1/20 0.33
NAAA Q02083 1/20 0.33
ALDH1A1 P00352 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19261603 1.00 TSHR (0.52) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL25636802 0.91 TSHR (0.44) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL10150821 0.90 TSHR (0.51) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL786499 0.89 TSHR (0.48) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL786684 0.89 TSHR (0.48) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL686582 0.88 CYP19A1 (0.40) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL17522545 0.87 TSHR (0.49) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL16131651 0.87 TSHR (0.49) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL10203472 0.87 TSHR (0.49) TSHRNPSR1EPHX2CYP19A1CYP17A1
SCHEMBL2605905 0.87 TSHR (0.53) TSHRNPSR1EPHX2CYP19A1CYP17A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 864 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20240210830-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-12-12 US disclosed
US-11833475-B2 Filtering device, purification device, and method for manufacturing chemical liquid FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-23 US disclosed
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-23 US disclosed
EP-4279991-A1 NOVEL SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-22 EP disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20080008962-A1 Polymerizable ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed
US-20080008965-A1 Ester compounds and their preparation, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed
EP-1873143-A1 A salt suitable for an acid generator and a chemically amplified resist composition containing the same Sumitomo Chemical Company, Limited (JP) 2008-01-02 EP disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-01 US disclosed
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-01 US disclosed
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SLC26A3, NHERF1, HCN4 TSHR 2167/4885NPSR1 767/4885EPHX2 1038/4885
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SCO2, CBR1, OXGR1 TSHR 847/4885NPSR1 1846/4885EPHX2 516/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST TSHR 2374/4885NPSR1 3263/4885EPHX2 2962/4885
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, TERB1, TRRAP TSHR 1473/4885NPSR1 3193/4885EPHX2 334/4885
US-20080008965-A1 Ester compounds and their preparation, polymers, resist compositions and patterning process ESR1, H1-2, H1-4 TSHR 2534/4885NPSR1 1814/4885EPHX2 13/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 TSHR 3144/4885NPSR1 2926/4885EPHX2 542/4885
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process NAF1, RALA, RSU1 TSHR 2101/4885NPSR1 1534/4885EPHX2 2943/4885
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, H1-0, CA7 TSHR 63/4885NPSR1 1577/4885EPHX2 2007/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.