SCHEMBL794807

SCHEMBL794807

CC(C)COC(=O)Oc1ccc([S+](c2ccc(OC(=O)OC(C)(C)C)cc2)c2ccc(OC(=O)OC(C)(C)C)cc2)cc1

nearest known ligand 0.50

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ELANE P08246 3/20 0.50
KDM1A O60341 1/20 0.41
CA2 P00918 3/20 0.40
ALDH1A1 P00352 1/20 0.36
TSHR P16473 1/20 0.36
MAPKAPK2 P49137 2/20 0.34
HTR2A P28223 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
OGA O60502 1/20 0.33
HIF1A Q16665 1/20 0.33
EPAS1 Q99814 1/20 0.33
ACACB O00763 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL795409 0.95 ELANE (0.46) ELANEKDM1ACA2ALDH1A1TSHR
SCHEMBL8323108 0.85 ELANE (0.66) ELANEKDM1ACA2MAPKAPK2MEN1
SCHEMBL794937 0.84 ELANE (0.50) ELANEKDM1ACA2ALDH1A1TSHR
SCHEMBL12923375 0.82 ELANE (0.47) ELANECA2ALDH1A1TSHR
SCHEMBL12770088 0.81 ALDH1A1 (0.42) ELANECA2ALDH1A1TSHRMEN1
SCHEMBL8322043 0.80 ELANE (0.58) ELANEKDM1ACA2ALDH1A1MEN1
SCHEMBL795385 0.80 ELANE (0.58) ELANEKDM1ACA2ALDH1A1MEN1
SCHEMBL9658092 0.80 ELANE (0.58) ELANEKDM1ACA2ALDH1A1TSHR
SCHEMBL8319671 0.79 ELANE (0.57) ELANEKDM1ACA2ALDH1A1MAPKAPK2
SCHEMBL1788254 0.77 MAPT (0.47) CA2ALDH1A1TSHRMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2017-02-09 US disclosed
US-9523911-B2 Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound JSR CORPORATION (JP) 2016-12-20 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-9104102-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2015-08-11 US disclosed
US-8980529-B2 Radiation-sensitive resin composition, polymer, and resist pattern-forming method JSR CORPORATION (JP) 2015-03-17 US disclosed
US-20140342288-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2014-11-20 US disclosed
US-8889335-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-11-18 US disclosed
US-8889888-B2 Sulfonic acid salt and derivative thereof, photo-acid generator, and process for production of sulfonic acid salt CENTRAL GLASS COMPANY, LIMITED (JP) 2014-11-18 US disclosed
US-20130244185-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ORGANIC ACID AND ACID GENERATING AGENT JSR CORPORATION (JP) 2013-09-19 US disclosed
US-20130177848-A1 Polymer, Resist Material Containing Same, and Method for Forming Pattern Using Same CENTRAL GLASS COMPANY LIMITED (JP) 2013-07-11 US disclosed
US-20130095428-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-04-18 US disclosed
US-20130078579-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATING AGENT AND COMPOUND JSR CORPORATION (JP) 2013-03-28 US disclosed
US-20130065186-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ORGANIC ACID AND ACID GENERATING AGENT JSR CORPORATION (JP) 2013-03-14 US disclosed
US-20120295198-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-11-22 US disclosed
US-20120070783-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2012-03-22 US disclosed
US-20110143279-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2011-06-16 US disclosed
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt CENTRAL GLASS COMPANY, LIMITED (JP) 2011-05-12 US disclosed
US-7897821-B2 Sulfonium compound JSR CORPORATION (JP) 2011-03-01 US disclosed
US-20110014569-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-01-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130244185-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ORGANIC ACID AND ACID GENERATING AGENT GLRA3, RER1, RXRG ELANE 980/4885KDM1A 2717/4885CA2 1085/4885
US-20130065186-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ORGANIC ACID AND ACID GENERATING AGENT GLRA3, RER1, FPR3 ELANE 981/4885KDM1A 2771/4885CA2 1021/4885
US-20130078579-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATING AGENT AND COMPOUND RER1, RAD51, RFT1 ELANE 863/4885KDM1A 1214/4885CA2 1188/4885
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt ASIC1, FGFR1, PFAS ELANE 4527/4885KDM1A 940/4885CA2 60/4885
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND RER1, ASIC1, GAR1 ELANE 1499/4885KDM1A 1032/4885CA2 807/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.